Attribute
Description
Manufacturer Part Number
SI6303KDWS-TP
Description
MOSFET 2N-CH 30V 0.5A SOT-363S
Manufacturer Lead Time
18 weeks
Note : GST will not be applied to orders shipping outside of India

Stock:

Distributor: 117

Quantity Unit Price Ext. Price
300000 ₹ 1.33000 ₹ 3,99,000.00
150000 ₹ 1.44000 ₹ 2,16,000.00
75000 ₹ 1.58000 ₹ 1,18,500.00
30000 ₹ 1.78000 ₹ 53,400.00
21000 ₹ 1.88000 ₹ 39,480.00
15000 ₹ 1.98000 ₹ 29,700.00
9000 ₹ 2.14000 ₹ 19,260.00
6000 ₹ 2.29000 ₹ 13,740.00
3000 ₹ 2.57000 ₹ 7,710.00

Stock:

Distributor: 108


Quantity Unit Price Ext. Price
1 ₹ 13.35000 ₹ 13.35
10 ₹ 8.90000 ₹ 89.00
100 ₹ 5.70000 ₹ 570.00
500 ₹ 3.56000 ₹ 1,780.00
1000 ₹ 3.12000 ₹ 3,120.00
3000 ₹ 2.49000 ₹ 7,470.00
6000 ₹ 2.23000 ₹ 13,380.00
9000 ₹ 1.87000 ₹ 16,830.00
24000 ₹ 1.78000 ₹ 42,720.00

Product Attributes

Type Description
Category
Import Duty Classification -
Product Series Line -
IC Encapsulation Type Tape & Reel (TR)
Availability Status Active
Core Technology Platform MOSFET (Metal Oxide)
Setup Arrangement 2 N-Channel (Dual)
Transistor Special Function -
Drain-Source Breakdown Volts 30V
Continuous Drain Current at 25C 500mA (Ta)
Max On-State Resistance 500mOhm @ 500mA, 4.5V
Max Threshold Gate Voltage 1.5V @ 250µA
Max Gate Charge at Vgs 0.55nC @ 4.5V
Max Input Cap at Vds 34pF @ 25V
Maximum Power Handling 300mW (Tj)
Ambient Temp Range -55°C ~ 150°C (TJ)
Quality Grade Level -
Certification Qualification -
Attachment Mounting Style Surface Mount
Component Housing Style 6-TSSOP, SC-88, SOT-363
Vendor Package Type SOT-363S

Description

Configured in a manner identified as 2 N-Channel (Dual). Is capable of sustaining a continuous drain current (Id) of 500mA (Ta) at 25°C. Supports a Vdss drain-to-source voltage rated at 30V. Ensures maximum 0.55nC @ 4.5V gate charge at Vgs for improved switching efficiency. Maintains 0.55nC @ 4.5V gate charge at Vgs for dependable MOSFET operation. The maximum input capacitance reaches 34pF @ 25V at Vds to protect the device. The input capacitance is specified at 34pF @ 25V at Vds for peak performance. Mounting configuration Surface Mount for structural stability. Temperature range -55°C ~ 150°C (TJ) for environmental conditions impacting thermal efficiency. Type of housing Tape & Reel (TR) for safeguarding or transporting components. Style of the enclosure/case 6-TSSOP, SC-88, SOT-363 that offers mechanical and thermal protection. Type of package SOT-363S that preserves the integrity of the device. Maximum power capability 300mW (Tj) for safeguarding the device. Product status Active concerning availability and lifecycle. Maximum Rds(on) at Id 0.55nC @ 4.5V for MOSFET performance. Maximum Rds(on) at Id and Vgs 500mOhm @ 500mA, 4.5V for MOSFET specifications. Supplier package type SOT-363S for component selection. The primary technology platform MOSFET (Metal Oxide) linked to the product category. Maximum Vgs(th) at Id 1.5V @ 250µA for MOSFET threshold specifications.