Description

Configured in a manner identified as N and P-Channel. Is capable of sustaining a continuous drain current (Id) of 6A (Ta) at 25°C. Supports a Vdss drain-to-source voltage rated at 20V. Ensures maximum 5.8nC @ 4.5V, 9nC @ 4.5V gate charge at Vgs for improved switching efficiency. Maintains 5.8nC @ 4.5V, 9nC @ 4.5V gate charge at Vgs for dependable MOSFET operation. The maximum input capacitance reaches 393pF @ 10V, 762pF @ 10V at Vds to protect the device. The input capacitance is specified at 393pF @ 10V, 762pF @ 10V at Vds for peak performance. Mounting configuration Surface Mount for structural stability. Temperature range -55°C ~ 150°C (TJ) for environmental conditions impacting thermal efficiency. Type of housing Tape & Reel (TR) for safeguarding or transporting components. Style of the enclosure/case 6-VDFN Exposed Pad that offers mechanical and thermal protection. Type of package DFN2020-6L that preserves the integrity of the device. Maximum power capability 1.6W (Tj) for safeguarding the device. Product status Active concerning availability and lifecycle. Maximum Rds(on) at Id 5.8nC @ 4.5V, 9nC @ 4.5V for MOSFET performance. Maximum Rds(on) at Id and Vgs 25mOhm @ 5A, 4.5V, 42mOhm @ 5A, 4.5V for MOSFET specifications. Supplier package type DFN2020-6L for component selection. The primary technology platform MOSFET (Metal Oxide) linked to the product category. Maximum Vgs(th) at Id 1V @ 250µA for MOSFET threshold specifications.