Description

Configured in a manner identified as N and P-Channel. Is capable of sustaining a continuous drain current (Id) of 230mA (Ta), 180mA (Ta) at 25°C. Supports a Vdss drain-to-source voltage rated at 60V. Ensures maximum 790pC @ 10V, 1.52nC @ 10V gate charge at Vgs for improved switching efficiency. Maintains 790pC @ 10V, 1.52nC @ 10V gate charge at Vgs for dependable MOSFET operation. The maximum input capacitance reaches 16.2pF @ 30V, 25.2pF @ 30V at Vds to protect the device. The input capacitance is specified at 16.2pF @ 30V, 25.2pF @ 30V at Vds for peak performance. Mounting configuration Surface Mount for structural stability. Temperature range -55°C ~ 150°C (TJ) for environmental conditions impacting thermal efficiency. Type of housing Tape & Reel (TR)Cut Tape (CT)Digi-Reel® for safeguarding or transporting components. Style of the enclosure/case SOT-563, SOT-666 that offers mechanical and thermal protection. Type of package SOT-563 that preserves the integrity of the device. Maximum power capability 285mW (Tj) for safeguarding the device. Product status Active concerning availability and lifecycle. Maximum Rds(on) at Id 790pC @ 10V, 1.52nC @ 10V for MOSFET performance. Maximum Rds(on) at Id and Vgs 2.5Ohm @ 200mA, 10V, 4Ohm @ 200mA, 10V for MOSFET specifications. Supplier package type SOT-563 for component selection. The primary technology platform MOSFET (Metal Oxide) linked to the product category. Maximum Vgs(th) at Id 2V @ 250µA, 1.8V @ 250µA for MOSFET threshold specifications.