Description

Configured in a manner identified as 2 N-Channel (Dual). Is capable of sustaining a continuous drain current (Id) of 220mA (Tc) at 25°C. Supports a Vdss drain-to-source voltage rated at 50V. Offers FET traits classified as Logic Level Gate. Ensures maximum 1.2nC @ 10V gate charge at Vgs for improved switching efficiency. Maintains 1.2nC @ 10V gate charge at Vgs for dependable MOSFET operation. Evaluated as Automotive grade for quality control. The maximum input capacitance reaches 29.5pF @ 25V at Vds to protect the device. The input capacitance is specified at 29.5pF @ 25V at Vds for peak performance. Mounting configuration Surface Mount for structural stability. Temperature range -55°C ~ 150°C (TJ) for environmental conditions impacting thermal efficiency. Type of housing Tape & Reel (TR)Cut Tape (CT)Digi-Reel® for safeguarding or transporting components. Style of the enclosure/case 6-TSSOP, SC-88, SOT-363 that offers mechanical and thermal protection. Type of package SOT-363 that preserves the integrity of the device. Maximum power capability 320mW (Tj) for safeguarding the device. Product status Active concerning availability and lifecycle. Certification AEC-Q101 for compliance with testing or regulatory standards. Maximum Rds(on) at Id 1.2nC @ 10V for MOSFET performance. Maximum Rds(on) at Id and Vgs 1.6Ohm @ 500mA, 10V for MOSFET specifications. Supplier package type SOT-363 for component selection. The primary technology platform MOSFET (Metal Oxide) linked to the product category. Maximum Vgs(th) at Id 1.45V @ 250µA for MOSFET threshold specifications.