Attribute
Description
Manufacturer Part Number
MIC94051BM4 TR
Manufacturer
Description
MOSFET P-CH 6V 1.8A 8MSOP
Manufacturer Lead Time
1 week
Note :
GST will not be applied to orders shipping outside of India
Stock:
Distributor: 160
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 100000 | ₹ 13.85000 | ₹ 13,85,000.00 |
| 10000 | ₹ 16.53000 | ₹ 1,65,300.00 |
| 1000 | ₹ 18.54000 | ₹ 18,540.00 |
| 500 | ₹ 20.11000 | ₹ 10,055.00 |
| 100 | ₹ 22.34000 | ₹ 2,234.00 |
Stock:
Distributor: 135
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 100000 | ₹ 13.85000 | ₹ 13,85,000.00 |
| 10000 | ₹ 16.53000 | ₹ 1,65,300.00 |
| 1000 | ₹ 18.54000 | ₹ 18,540.00 |
| 500 | ₹ 20.11000 | ₹ 10,055.00 |
| 100 | ₹ 22.34000 | ₹ 2,234.00 |
Stock:
Distributor: 111
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 100000 | ₹ 17.31000 | ₹ 17,31,000.00 |
| 10000 | ₹ 20.66000 | ₹ 2,06,600.00 |
| 1441 | ₹ 23.18000 | ₹ 33,402.38 |
Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Field Effect Transistor Type | MOSFET P-Channel, Metal Oxide | |
| Drain-Source Breakdown Volts | 6V | |
| Continuous Drain Current at 25C | 1.8A (Ta) | |
| Max On-State Resistance | 160 mOhm @ 100mA, 4.5V | |
| Max Threshold Gate Voltage | 1.2V @ 250µA | |
| Gate Charge at Vgs | - | |
| Input Cap at Vds | 600pF @ 5.5V | |
| Maximum Power Handling | 568mW | |
| Attachment Mounting Style | Surface Mount | |
| Component Housing Style | TO-253-4, TO-253AA |
Description
Assesses resistance at forward current MOSFET P-Channel, Metal Oxide for LED or diode testing. Is capable of sustaining a continuous drain current (Id) of 1.8A (Ta) at 25°C. Supports a Vdss drain-to-source voltage rated at 6V. Includes FET category defined as MOSFET P-Channel, Metal Oxide. The input capacitance is specified at 600pF @ 5.5V at Vds for peak performance. Mounting configuration Surface Mount for structural stability. Style of the enclosure/case TO-253-4, TO-253AA that offers mechanical and thermal protection. Maximum power capability 568mW for safeguarding the device. Maximum Rds(on) at Id and Vgs 160 mOhm @ 100mA, 4.5V for MOSFET specifications. Maximum Vgs(th) at Id 1.2V @ 250µA for MOSFET threshold specifications.
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