Attribute
Description
Manufacturer Part Number
UM6K1N-TP
Description
MOSFET 2N-CH 30V 0.1A SOT363
Manufacturer Lead Time
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Product Attributes

Type Description
Category
Import Duty Classification -
Product Series Line -
IC Encapsulation Type Bulk
Availability Status Obsolete
Core Technology Platform MOSFET (Metal Oxide)
Setup Arrangement 2 N-Channel (Dual)
Transistor Special Function -
Drain-Source Breakdown Volts 30V
Continuous Drain Current at 25C 100mA
Max On-State Resistance 8Ohm @ 10mA, 4V
Max Threshold Gate Voltage 1.5V @ 100µA
Max Gate Charge at Vgs -
Max Input Cap at Vds 13pF @ 5V
Maximum Power Handling 150mW
Ambient Temp Range -55°C ~ 150°C (TJ)
Quality Grade Level -
Certification Qualification -
Attachment Mounting Style Surface Mount
Component Housing Style 6-TSSOP, SC-88, SOT-363
Vendor Package Type SOT-363

Description

Configured in a manner identified as 2 N-Channel (Dual). Is capable of sustaining a continuous drain current (Id) of 100mA at 25°C. Supports a Vdss drain-to-source voltage rated at 30V. The maximum input capacitance reaches 13pF @ 5V at Vds to protect the device. The input capacitance is specified at 13pF @ 5V at Vds for peak performance. Mounting configuration Surface Mount for structural stability. Temperature range -55°C ~ 150°C (TJ) for environmental conditions impacting thermal efficiency. Type of housing Bulk for safeguarding or transporting components. Style of the enclosure/case 6-TSSOP, SC-88, SOT-363 that offers mechanical and thermal protection. Type of package SOT-363 that preserves the integrity of the device. Maximum power capability 150mW for safeguarding the device. Product status Obsolete concerning availability and lifecycle. Maximum Rds(on) at Id and Vgs 8Ohm @ 10mA, 4V for MOSFET specifications. Supplier package type SOT-363 for component selection. The primary technology platform MOSFET (Metal Oxide) linked to the product category. Maximum Vgs(th) at Id 1.5V @ 100µA for MOSFET threshold specifications.