Attribute
Description
Manufacturer Part Number
CPC5602C
Description
MOSFET N-CH 350V 5MA SOT-223
Manufacturer Lead Time
39 weeks

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Product Attributes

Type Description
Category
Field Effect Transistor Type MOSFET N-Channel, Metal Oxide
Drain-Source Breakdown Volts 350V
Continuous Drain Current at 25C 5mA (Ta)
Max On-State Resistance 14 Ohm @ 50mA, 350mV
Max Threshold Gate Voltage -
Gate Charge at Vgs -
Input Cap at Vds 300pF @ 0V
Maximum Power Handling 2.5W
Attachment Mounting Style Surface Mount
Component Housing Style TO-261-4, TO-261AA

Description

Assesses resistance at forward current MOSFET N-Channel, Metal Oxide for LED or diode testing. Is capable of sustaining a continuous drain current (Id) of 5mA (Ta) at 25°C. Supports a Vdss drain-to-source voltage rated at 350V. Includes FET category defined as MOSFET N-Channel, Metal Oxide. The input capacitance is specified at 300pF @ 0V at Vds for peak performance. Mounting configuration Surface Mount for structural stability. Style of the enclosure/case TO-261-4, TO-261AA that offers mechanical and thermal protection. Maximum power capability 2.5W for safeguarding the device. Maximum Rds(on) at Id and Vgs 14 Ohm @ 50mA, 350mV for MOSFET specifications.