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Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Import Duty Classification | - | |
| Product Series Line | HEXFET® | |
| IC Encapsulation Type | Tape & Reel (TR) | |
| Availability Status | Obsolete | |
| Core Technology Platform | MOSFET (Metal Oxide) | |
| Setup Arrangement | 2 N-Channel (Dual) | |
| Transistor Special Function | Logic Level Gate | |
| Drain-Source Breakdown Volts | 20V | |
| Continuous Drain Current at 25C | 4.8A | |
| Max On-State Resistance | 35mOhm @ 4.8A, 4.5V | |
| Max Threshold Gate Voltage | 1.2V @ 250µA | |
| Max Gate Charge at Vgs | 23nC @ 4.5V | |
| Max Input Cap at Vds | 1340pF @ 15V | |
| Maximum Power Handling | 1.2W | |
| Ambient Temp Range | -55°C ~ 150°C (TJ) | |
| Quality Grade Level | - | |
| Certification Qualification | - | |
| Attachment Mounting Style | Surface Mount | |
| Component Housing Style | 8-TSSOP (0.173", 4.40mm Width) | |
| Vendor Package Type | 8-TSSOP |
Description
Configured in a manner identified as 2 N-Channel (Dual). Is capable of sustaining a continuous drain current (Id) of 4.8A at 25°C. Supports a Vdss drain-to-source voltage rated at 20V. Offers FET traits classified as Logic Level Gate. Ensures maximum 23nC @ 4.5V gate charge at Vgs for improved switching efficiency. Maintains 23nC @ 4.5V gate charge at Vgs for dependable MOSFET operation. The maximum input capacitance reaches 1340pF @ 15V at Vds to protect the device. The input capacitance is specified at 1340pF @ 15V at Vds for peak performance. Mounting configuration Surface Mount for structural stability. Temperature range -55°C ~ 150°C (TJ) for environmental conditions impacting thermal efficiency. Type of housing Tape & Reel (TR) for safeguarding or transporting components. Style of the enclosure/case 8-TSSOP (0.173", 4.40mm Width) that offers mechanical and thermal protection. Type of package 8-TSSOP that preserves the integrity of the device. Maximum power capability 1.2W for safeguarding the device. Product status Obsolete concerning availability and lifecycle. Maximum Rds(on) at Id 23nC @ 4.5V for MOSFET performance. Maximum Rds(on) at Id and Vgs 35mOhm @ 4.8A, 4.5V for MOSFET specifications. Classification series for the product or component HEXFET®. Supplier package type 8-TSSOP for component selection. The primary technology platform MOSFET (Metal Oxide) linked to the product category. Maximum Vgs(th) at Id 1.2V @ 250µA for MOSFET threshold specifications.
