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Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Import Duty Classification | Tariff may apply if shipping to the United States | |
| Product Series Line | HEXFET® | |
| IC Encapsulation Type | Tape & Reel (TR) | |
| Availability Status | Obsolete | |
| Core Technology Platform | MOSFET (Metal Oxide) | |
| Setup Arrangement | 2 P-Channel (Dual) | |
| Transistor Special Function | Logic Level Gate | |
| Drain-Source Breakdown Volts | 30V | |
| Continuous Drain Current at 25C | 4.5A | |
| Max On-State Resistance | 35mOhm @ 4.5A, 10V | |
| Max Threshold Gate Voltage | 2.5V @ 250µA | |
| Max Gate Charge at Vgs | 44nC @ 10V | |
| Max Input Cap at Vds | 1464pF @ 25V | |
| Maximum Power Handling | 1W | |
| Ambient Temp Range | -55°C ~ 150°C (TJ) | |
| Quality Grade Level | - | |
| Certification Qualification | - | |
| Attachment Mounting Style | Surface Mount | |
| Component Housing Style | 8-TSSOP (0.173", 4.40mm Width) | |
| Vendor Package Type | 8-TSSOP |
Description
Assesses resistance at forward current Tariff may apply if shipping to the United States for LED or diode testing. Configured in a manner identified as 2 P-Channel (Dual). Is capable of sustaining a continuous drain current (Id) of 4.5A at 25°C. Supports a Vdss drain-to-source voltage rated at 30V. Offers FET traits classified as Logic Level Gate. Ensures maximum 44nC @ 10V gate charge at Vgs for improved switching efficiency. Maintains 44nC @ 10V gate charge at Vgs for dependable MOSFET operation. The maximum input capacitance reaches 1464pF @ 25V at Vds to protect the device. The input capacitance is specified at 1464pF @ 25V at Vds for peak performance. Mounting configuration Surface Mount for structural stability. Temperature range -55°C ~ 150°C (TJ) for environmental conditions impacting thermal efficiency. Type of housing Tape & Reel (TR) for safeguarding or transporting components. Style of the enclosure/case 8-TSSOP (0.173", 4.40mm Width) that offers mechanical and thermal protection. Type of package 8-TSSOP that preserves the integrity of the device. Maximum power capability 1W for safeguarding the device. Product status Obsolete concerning availability and lifecycle. Maximum Rds(on) at Id 44nC @ 10V for MOSFET performance. Maximum Rds(on) at Id and Vgs 35mOhm @ 4.5A, 10V for MOSFET specifications. Classification series for the product or component HEXFET®. Supplier package type 8-TSSOP for component selection. The classification for import duties Tariff may apply if shipping to the United States related to import and export transactions. The primary technology platform MOSFET (Metal Oxide) linked to the product category. Maximum Vce(on) at Vge Tariff may apply if shipping to the United States for transistor specifications. Maximum Vgs(th) at Id 2.5V @ 250µA for MOSFET threshold specifications.
