Attribute
Description
Manufacturer Part Number
IRF5810
Manufacturer
Description
MOSFET 2P-CH 20V 2.9A 6TSOP
Manufacturer Lead Time
26 weeks

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Product Attributes

Type Description
Category
Import Duty Classification -
Product Series Line HEXFET®
IC Encapsulation Type Tube
Availability Status Obsolete
Core Technology Platform MOSFET (Metal Oxide)
Setup Arrangement 2 P-Channel (Dual)
Transistor Special Function Logic Level Gate
Drain-Source Breakdown Volts 20V
Continuous Drain Current at 25C 2.9A
Max On-State Resistance 90mOhm @ 2.9A, 4.5V
Max Threshold Gate Voltage 1.2V @ 250µA
Max Gate Charge at Vgs 9.6nC @ 4.5V
Max Input Cap at Vds 650pF @ 16V
Maximum Power Handling 960mW
Ambient Temp Range -
Quality Grade Level -
Certification Qualification -
Attachment Mounting Style Surface Mount
Component Housing Style SOT-23-6 Thin, TSOT-23-6
Vendor Package Type 6-TSOP

Description

Configured in a manner identified as 2 P-Channel (Dual). Is capable of sustaining a continuous drain current (Id) of 2.9A at 25°C. Supports a Vdss drain-to-source voltage rated at 20V. Offers FET traits classified as Logic Level Gate. Ensures maximum 9.6nC @ 4.5V gate charge at Vgs for improved switching efficiency. Maintains 9.6nC @ 4.5V gate charge at Vgs for dependable MOSFET operation. The maximum input capacitance reaches 650pF @ 16V at Vds to protect the device. The input capacitance is specified at 650pF @ 16V at Vds for peak performance. Mounting configuration Surface Mount for structural stability. Type of housing Tube for safeguarding or transporting components. Style of the enclosure/case SOT-23-6 Thin, TSOT-23-6 that offers mechanical and thermal protection. Type of package 6-TSOP that preserves the integrity of the device. Maximum power capability 960mW for safeguarding the device. Product status Obsolete concerning availability and lifecycle. Maximum Rds(on) at Id 9.6nC @ 4.5V for MOSFET performance. Maximum Rds(on) at Id and Vgs 90mOhm @ 2.9A, 4.5V for MOSFET specifications. Classification series for the product or component HEXFET®. Supplier package type 6-TSOP for component selection. The primary technology platform MOSFET (Metal Oxide) linked to the product category. Maximum Vgs(th) at Id 1.2V @ 250µA for MOSFET threshold specifications.