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Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Import Duty Classification | - | |
| Product Series Line | OptiMOS™ | |
| IC Encapsulation Type | Tape & Reel (TR) | |
| Availability Status | Obsolete | |
| Core Technology Platform | MOSFET (Metal Oxide) | |
| Setup Arrangement | N and P-Channel | |
| Transistor Special Function | Logic Level Gate | |
| Drain-Source Breakdown Volts | 55V, 30V | |
| Continuous Drain Current at 25C | 40A | |
| Max On-State Resistance | 11.7mOhm @ 20A, 10V | |
| Max Threshold Gate Voltage | 2.2V @ 40µA | |
| Max Gate Charge at Vgs | 121nC @ 10V | |
| Max Input Cap at Vds | 6100pF @ 25V | |
| Maximum Power Handling | 69W, 96W | |
| Ambient Temp Range | -55°C ~ 150°C (TJ) | |
| Quality Grade Level | - | |
| Certification Qualification | - | |
| Attachment Mounting Style | Surface Mount | |
| Component Housing Style | TO-263-6, D2PAK (5 Leads + Tab), TO-263BA | |
| Vendor Package Type | PG-TO263-5-1 |
Description
Configured in a manner identified as N and P-Channel. Is capable of sustaining a continuous drain current (Id) of 40A at 25°C. Supports a Vdss drain-to-source voltage rated at 55V, 30V. Offers FET traits classified as Logic Level Gate. Ensures maximum 121nC @ 10V gate charge at Vgs for improved switching efficiency. Maintains 121nC @ 10V gate charge at Vgs for dependable MOSFET operation. The maximum input capacitance reaches 6100pF @ 25V at Vds to protect the device. The input capacitance is specified at 6100pF @ 25V at Vds for peak performance. Mounting configuration Surface Mount for structural stability. Temperature range -55°C ~ 150°C (TJ) for environmental conditions impacting thermal efficiency. Type of housing Tape & Reel (TR) for safeguarding or transporting components. Style of the enclosure/case TO-263-6, D2PAK (5 Leads + Tab), TO-263BA that offers mechanical and thermal protection. Type of package PG-TO263-5-1 that preserves the integrity of the device. Maximum power capability 69W, 96W for safeguarding the device. Product status Obsolete concerning availability and lifecycle. Maximum Rds(on) at Id 121nC @ 10V for MOSFET performance. Maximum Rds(on) at Id and Vgs 11.7mOhm @ 20A, 10V for MOSFET specifications. Classification series for the product or component OptiMOS™. Supplier package type PG-TO263-5-1 for component selection. The primary technology platform MOSFET (Metal Oxide) linked to the product category. Maximum Vgs(th) at Id 2.2V @ 40µA for MOSFET threshold specifications.
