Stock:
Distributor: 117
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 3000 | ₹ 175.00000 | ₹ 5,25,000.00 |
| 500 | ₹ 214.20000 | ₹ 1,07,100.00 |
| 100 | ₹ 223.27000 | ₹ 22,327.00 |
| 10 | ₹ 312.30000 | ₹ 3,123.00 |
| 1 | ₹ 469.03000 | ₹ 469.03 |
Stock:
Distributor: 116
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 24000 | ₹ 175.00000 | ₹ 42,00,000.00 |
| 18000 | ₹ 179.49000 | ₹ 32,30,820.00 |
| 12000 | ₹ 184.20000 | ₹ 22,10,400.00 |
| 6000 | ₹ 189.19000 | ₹ 11,35,140.00 |
| 3000 | ₹ 199.99000 | ₹ 5,99,970.00 |
Stock:
Distributor: 108
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 1 | ₹ 446.78000 | ₹ 446.78 |
| 10 | ₹ 312.39000 | ₹ 3,123.90 |
| 100 | ₹ 223.39000 | ₹ 22,339.00 |
| 500 | ₹ 199.36000 | ₹ 99,680.00 |
| 1000 | ₹ 193.13000 | ₹ 1,93,130.00 |
| 3000 | ₹ 178.89000 | ₹ 5,36,670.00 |
Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Import Duty Classification | - | |
| Product Series Line | OptiMOS™ 5 | |
| IC Encapsulation Type | Tape & Reel (TR)Cut Tape (CT)Digi-Reel® | |
| Availability Status | Active | |
| Core Technology Platform | MOSFET (Metal Oxide) | |
| Setup Arrangement | 2 N-Channel (Half Bridge) | |
| Transistor Special Function | - | |
| Drain-Source Breakdown Volts | 60V | |
| Continuous Drain Current at 25C | 31A (Ta), 233A (Tc) | |
| Max On-State Resistance | 1.6mOhm @ 50A, 10V | |
| Max Threshold Gate Voltage | 3.3V @ 86µA | |
| Max Gate Charge at Vgs | 102nC @ 10V | |
| Max Input Cap at Vds | 6400pF @ 30V | |
| Maximum Power Handling | 3W (Ta), 167W (Tc) | |
| Ambient Temp Range | -55°C ~ 175°C (TJ) | |
| Quality Grade Level | - | |
| Certification Qualification | - | |
| Attachment Mounting Style | Surface Mount | |
| Component Housing Style | 10-PowerWDFN | |
| Vendor Package Type | PG-WHITFN-10-1 |
Description
Configured in a manner identified as 2 N-Channel (Half Bridge). Is capable of sustaining a continuous drain current (Id) of 31A (Ta), 233A (Tc) at 25°C. Supports a Vdss drain-to-source voltage rated at 60V. Ensures maximum 102nC @ 10V gate charge at Vgs for improved switching efficiency. Maintains 102nC @ 10V gate charge at Vgs for dependable MOSFET operation. The maximum input capacitance reaches 6400pF @ 30V at Vds to protect the device. The input capacitance is specified at 6400pF @ 30V at Vds for peak performance. Mounting configuration Surface Mount for structural stability. Temperature range -55°C ~ 175°C (TJ) for environmental conditions impacting thermal efficiency. Type of housing Tape & Reel (TR)Cut Tape (CT)Digi-Reel® for safeguarding or transporting components. Style of the enclosure/case 10-PowerWDFN that offers mechanical and thermal protection. Type of package PG-WHITFN-10-1 that preserves the integrity of the device. Maximum power capability 3W (Ta), 167W (Tc) for safeguarding the device. Product status Active concerning availability and lifecycle. Maximum Rds(on) at Id 102nC @ 10V for MOSFET performance. Maximum Rds(on) at Id and Vgs 1.6mOhm @ 50A, 10V for MOSFET specifications. Classification series for the product or component OptiMOS™ 5. Supplier package type PG-WHITFN-10-1 for component selection. The primary technology platform MOSFET (Metal Oxide) linked to the product category. Maximum Vgs(th) at Id 3.3V @ 86µA for MOSFET threshold specifications.
