Description

Configured in a manner identified as 2 N-Channel (Half Bridge). Is capable of sustaining a continuous drain current (Id) of 42A (Ta), 299A (Tc) at 25°C. Supports a Vdss drain-to-source voltage rated at 40V. Ensures maximum 104nC @ 10V gate charge at Vgs for improved switching efficiency. Maintains 104nC @ 10V gate charge at Vgs for dependable MOSFET operation. The maximum input capacitance reaches 6200pF @ 20V at Vds to protect the device. The input capacitance is specified at 6200pF @ 20V at Vds for peak performance. Mounting configuration Surface Mount for structural stability. Temperature range -55°C ~ 175°C (TJ) for environmental conditions impacting thermal efficiency. Type of housing Tape & Reel (TR)Cut Tape (CT)Digi-Reel® for safeguarding or transporting components. Style of the enclosure/case 10-PowerVDFN that offers mechanical and thermal protection. Type of package PG-VITFN-10-1 that preserves the integrity of the device. Maximum power capability 3W (Ta), 167W (Tc) for safeguarding the device. Product status Active concerning availability and lifecycle. Maximum Rds(on) at Id 104nC @ 10V for MOSFET performance. Maximum Rds(on) at Id and Vgs 0.88mOhm @ 50A, 10V for MOSFET specifications. Classification series for the product or component OptiMOS™ 6. Supplier package type PG-VITFN-10-1 for component selection. The primary technology platform MOSFET (Metal Oxide) linked to the product category. Maximum Vgs(th) at Id 2.8V @ 780µA for MOSFET threshold specifications.