Description

Configured in a manner identified as N and P-Channel. Is capable of sustaining a continuous drain current (Id) of 7.2A (Ta), 9.6A (Tc), 6.6A (Ta), 8.8A (Tc) at 25°C. Supports a Vdss drain-to-source voltage rated at 40V. Ensures maximum 19.5nC @ 10V, 19nC @ 10V gate charge at Vgs for improved switching efficiency. Maintains 19.5nC @ 10V, 19nC @ 10V gate charge at Vgs for dependable MOSFET operation. The maximum input capacitance reaches 1100pF @ 20V, 2500pF @ 20V at Vds to protect the device. The input capacitance is specified at 1100pF @ 20V, 2500pF @ 20V at Vds for peak performance. Mounting configuration Surface Mount for structural stability. Temperature range -55°C ~ 150°C (TJ) for environmental conditions impacting thermal efficiency. Type of housing Tape & Reel (TR)Cut Tape (CT)Digi-Reel® for safeguarding or transporting components. Style of the enclosure/case 8-SOIC (0.154", 3.90mm Width) that offers mechanical and thermal protection. Type of package PG-DSO-8-920 that preserves the integrity of the device. Maximum power capability 1.4W (Ta), 2.5W (Tc) for safeguarding the device. Product status Active concerning availability and lifecycle. Maximum Rds(on) at Id 19.5nC @ 10V, 19nC @ 10V for MOSFET performance. Maximum Rds(on) at Id and Vgs 17mOhm @ 9.6A, 10V, 23mOhm @ 8.8A, 10V for MOSFET specifications. Classification series for the product or component OptiMOS™ 3. Supplier package type PG-DSO-8-920 for component selection. The primary technology platform MOSFET (Metal Oxide) linked to the product category. Maximum Vgs(th) at Id 2.7V @ 1mA for MOSFET threshold specifications.