Description

Configured in a manner identified as 2 P-Channel (Dual). Is capable of sustaining a continuous drain current (Id) of 2.3A at 25°C. Supports a Vdss drain-to-source voltage rated at 30V. Offers FET traits classified as Logic Level Gate. Ensures maximum 3.7nC @ 10V gate charge at Vgs for improved switching efficiency. Maintains 3.7nC @ 10V gate charge at Vgs for dependable MOSFET operation. The maximum input capacitance reaches 160pF @ 25V at Vds to protect the device. The input capacitance is specified at 160pF @ 25V at Vds for peak performance. Mounting configuration Surface Mount for structural stability. Temperature range -55°C ~ 150°C (TJ) for environmental conditions impacting thermal efficiency. Type of housing Tape & Reel (TR)Cut Tape (CT)Digi-Reel® for safeguarding or transporting components. Style of the enclosure/case 6-PowerVDFN that offers mechanical and thermal protection. Type of package 6-PQFN Dual (2x2) that preserves the integrity of the device. Maximum power capability 1.4W for safeguarding the device. Product status Last Time Buy concerning availability and lifecycle. Maximum Rds(on) at Id 3.7nC @ 10V for MOSFET performance. Maximum Rds(on) at Id and Vgs 170mOhm @ 3.1A, 10V for MOSFET specifications. Classification series for the product or component HEXFET®. Supplier package type 6-PQFN Dual (2x2) for component selection. The primary technology platform MOSFET (Metal Oxide) linked to the product category. Maximum Vgs(th) at Id 2.4V @ 10µA for MOSFET threshold specifications.