Description

Configured in a manner identified as 2 N-Channel (Half Bridge). Is capable of sustaining a continuous drain current (Id) of 45A (Tc) at 25°C. Supports a Vdss drain-to-source voltage rated at 1200V (1.2kV). Ensures maximum 28nC @ 0V gate charge at Vgs for improved switching efficiency. Maintains 28nC @ 0V gate charge at Vgs for dependable MOSFET operation. The maximum input capacitance reaches 1010pF @ 800V at Vds to protect the device. The input capacitance is specified at 1010pF @ 800V at Vds for peak performance. Mounting configuration Surface Mount for structural stability. Temperature range -55°C ~ 175°C (TJ) for environmental conditions impacting thermal efficiency. Type of housing Tape & Reel (TR)Cut Tape (CT)Digi-Reel® for safeguarding or transporting components. Style of the enclosure/case 24-BSOP (0.606", 15.40mm Width), 16 Leads, Exposed Pad that offers mechanical and thermal protection. Type of package PG-HDSOP-16-221 that preserves the integrity of the device. Maximum power capability 234W (Tc) for safeguarding the device. Product status Active concerning availability and lifecycle. Maximum Rds(on) at Id 28nC @ 0V for MOSFET performance. Maximum Rds(on) at Id and Vgs 53mOhm @ 13A, 18V for MOSFET specifications. Classification series for the product or component CoolSiC™ G2. Supplier package type PG-HDSOP-16-221 for component selection. The primary technology platform SiCFET (Silicon Carbide) linked to the product category. Maximum Vgs(th) at Id 5.1V @ 4.1mA for MOSFET threshold specifications.