Description

Configured in a manner identified as 2 N-Channel, Common Drain, Common Source. Is capable of sustaining a continuous drain current (Id) of 300A (Tj) at 25°C. Supports a Vdss drain-to-source voltage rated at 80V. Ensures maximum 24nC @ 10V gate charge at Vgs for improved switching efficiency. Maintains 24nC @ 10V gate charge at Vgs for dependable MOSFET operation. Evaluated as Automotive grade for quality control. The maximum input capacitance reaches 15340pF @ 40V at Vds to protect the device. The input capacitance is specified at 15340pF @ 40V at Vds for peak performance. Mounting configuration Surface Mount for structural stability. Temperature range -55°C ~ 175°C (TJ) for environmental conditions impacting thermal efficiency. Type of housing Tape & Reel (TR)Cut Tape (CT)Digi-Reel® for safeguarding or transporting components. Style of the enclosure/case 8-PowerSFN that offers mechanical and thermal protection. Type of package PG-HSOF-8-2 that preserves the integrity of the device. Maximum power capability 375W (Tc) for safeguarding the device. Product status Active concerning availability and lifecycle. Certification AEC-Q101 for compliance with testing or regulatory standards. Maximum Rds(on) at Id 24nC @ 10V for MOSFET performance. Maximum Rds(on) at Id and Vgs 1.15mOhm @ 100A, 10V for MOSFET specifications. Classification series for the product or component OptiMOS™ 5. Supplier package type PG-HSOF-8-2 for component selection. The primary technology platform MOSFET (Metal Oxide) linked to the product category. Maximum Vgs(th) at Id 3.3V @ 275µA for MOSFET threshold specifications.