Home Products Diodes Transistors And Thyristors Mosfet Field Effect Transistors Infineon Technologies Ag FF8MR12W1M1HB11BPSA1
Attribute
Description
Manufacturer Part Number
FF8MR12W1M1HB11BPSA1
Manufacturer
Description
MOSFET 1200V AG-EASY1B
Manufacturer Lead Time
16 weeks
Note :
GST will not be applied to orders shipping outside of India
Stock:
Distributor: 160
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 10000 | ₹ 5,734.27000 | ₹ 5,73,42,700.00 |
| 1000 | ₹ 6,092.94000 | ₹ 60,92,940.00 |
| 500 | ₹ 6,451.61000 | ₹ 32,25,805.00 |
| 100 | ₹ 6,809.39000 | ₹ 6,80,939.00 |
| 25 | ₹ 7,168.06000 | ₹ 1,79,201.50 |
Stock:
Distributor: 117
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 24 | ₹ 6,809.61000 | ₹ 1,63,430.64 |
| 1 | ₹ 8,342.86000 | ₹ 8,342.86 |
Stock:
Distributor: 111
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 10000 | ₹ 7,167.84000 | ₹ 7,16,78,400.00 |
| 1000 | ₹ 7,616.18000 | ₹ 76,16,180.00 |
| 500 | ₹ 8,064.51000 | ₹ 40,32,255.00 |
| 100 | ₹ 8,511.74000 | ₹ 8,51,174.00 |
| 25 | ₹ 8,960.07000 | ₹ 2,24,001.75 |
Stock:
Distributor: 116
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 10 | ₹ 7,189.42000 | ₹ 71,894.20 |
| 5 | ₹ 7,922.78000 | ₹ 39,613.90 |
| 1 | ₹ 8,656.14000 | ₹ 8,656.14 |
Stock:
Distributor: 130
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 1 | ₹ 8,892.24000 | ₹ 8,892.24 |
| 5 | ₹ 8,459.94000 | ₹ 42,299.70 |
| 10 | ₹ 8,027.64000 | ₹ 80,276.40 |
| 50 | ₹ 7,595.34000 | ₹ 3,79,767.00 |
Stock:
Distributor: 113
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 1 | ₹ 9,933.11000 | ₹ 9,933.11 |
| 3 | ₹ 9,809.76000 | ₹ 29,429.28 |
| 10 | ₹ 9,677.68000 | ₹ 96,776.80 |
| 20 | ₹ 9,601.68000 | ₹ 1,92,033.60 |
| 40 | ₹ 9,459.63000 | ₹ 3,78,385.20 |
Stock:
Distributor: 108
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 1 | ₹ 10,004.49000 | ₹ 10,004.49 |
| 10 | ₹ 8,404.27000 | ₹ 84,042.70 |
Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Import Duty Classification | - | |
| Product Series Line | CoolSiC™ | |
| IC Encapsulation Type | Tray | |
| Availability Status | Active | |
| Core Technology Platform | Silicon Carbide (SiC) | |
| Setup Arrangement | - | |
| Transistor Special Function | - | |
| Drain-Source Breakdown Volts | 1200V (1.2kV) | |
| Continuous Drain Current at 25C | - | |
| Max On-State Resistance | - | |
| Max Threshold Gate Voltage | - | |
| Max Gate Charge at Vgs | - | |
| Max Input Cap at Vds | - | |
| Maximum Power Handling | - | |
| Ambient Temp Range | - | |
| Quality Grade Level | - | |
| Certification Qualification | - | |
| Attachment Mounting Style | Chassis Mount | |
| Component Housing Style | Module | |
| Vendor Package Type | AG-EASY1B |
Description
Supports a Vdss drain-to-source voltage rated at 1200V (1.2kV). Mounting configuration Chassis Mount for structural stability. Type of housing Tray for safeguarding or transporting components. Style of the enclosure/case Module that offers mechanical and thermal protection. Type of package AG-EASY1B that preserves the integrity of the device. Product status Active concerning availability and lifecycle. Classification series for the product or component CoolSiC™. Supplier package type AG-EASY1B for component selection. The primary technology platform Silicon Carbide (SiC) linked to the product category.
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