Description

Configured in a manner identified as N and P-Channel Complementary. Is capable of sustaining a continuous drain current (Id) of 5.1A, 3.2A at 25°C. Supports a Vdss drain-to-source voltage rated at 20V. Offers FET traits classified as Logic Level Gate, 2.5V Drive. Ensures maximum 2.8nC @ 4.5V gate charge at Vgs for improved switching efficiency. Maintains 2.8nC @ 4.5V gate charge at Vgs for dependable MOSFET operation. Evaluated as Automotive grade for quality control. The maximum input capacitance reaches 419pF @ 10V at Vds to protect the device. The input capacitance is specified at 419pF @ 10V at Vds for peak performance. Mounting configuration Surface Mount for structural stability. Temperature range -55°C ~ 175°C (TJ) for environmental conditions impacting thermal efficiency. Type of housing Tape & Reel (TR)Cut Tape (CT)Digi-Reel® for safeguarding or transporting components. Style of the enclosure/case 8-PowerTDFN that offers mechanical and thermal protection. Type of package PG-TSDSON-8-FL that preserves the integrity of the device. Maximum power capability 2.5W for safeguarding the device. Product status Active concerning availability and lifecycle. Certification AEC-Q101 for compliance with testing or regulatory standards. Maximum Rds(on) at Id 2.8nC @ 4.5V for MOSFET performance. Maximum Rds(on) at Id and Vgs 55mOhm @ 5.1A, 4.5V for MOSFET specifications. Classification series for the product or component HEXFET®. Supplier package type PG-TSDSON-8-FL for component selection. The primary technology platform MOSFET (Metal Oxide) linked to the product category. Maximum Vgs(th) at Id 1.4V @ 110µA for MOSFET threshold specifications.