Description

Configured in a manner identified as 2 N-Channel (Dual) Asymmetrical. Is capable of sustaining a continuous drain current (Id) of 19A, 41A at 25°C. Supports a Vdss drain-to-source voltage rated at 25V. Offers FET traits classified as Logic Level Gate, 4.5V Drive. Ensures maximum 8.4nC @ 4.5V gate charge at Vgs for improved switching efficiency. Maintains 8.4nC @ 4.5V gate charge at Vgs for dependable MOSFET operation. The maximum input capacitance reaches 1100pF @ 12V at Vds to protect the device. The input capacitance is specified at 1100pF @ 12V at Vds for peak performance. Mounting configuration Surface Mount for structural stability. Temperature range -55°C ~ 150°C (TJ) for environmental conditions impacting thermal efficiency. Type of housing Tape & Reel (TR)Cut Tape (CT)Digi-Reel® for safeguarding or transporting components. Style of the enclosure/case 8-PowerTDFN that offers mechanical and thermal protection. Type of package PG-TISON-8 that preserves the integrity of the device. Maximum power capability 2.5W for safeguarding the device. Product status Active concerning availability and lifecycle. Maximum Rds(on) at Id 8.4nC @ 4.5V for MOSFET performance. Maximum Rds(on) at Id and Vgs 3mOhm @ 20A, 10V for MOSFET specifications. Classification series for the product or component OptiMOS™. Supplier package type PG-TISON-8 for component selection. The primary technology platform MOSFET (Metal Oxide) linked to the product category. Maximum Vgs(th) at Id 2V @ 250µA for MOSFET threshold specifications.