Stock:
Distributor: 108
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 1 | ₹ 132.61000 | ₹ 132.61 |
| 10 | ₹ 86.51000 | ₹ 865.10 |
| 100 | ₹ 59.27000 | ₹ 5,927.00 |
| 500 | ₹ 47.97000 | ₹ 23,985.00 |
| 1000 | ₹ 44.14000 | ₹ 44,140.00 |
| 5000 | ₹ 37.11000 | ₹ 1,85,550.00 |
| 10000 | ₹ 36.93000 | ₹ 3,69,300.00 |
Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Field Effect Transistor Type | MOSFET N-Channel, Metal Oxide | |
| Drain-Source Breakdown Volts | 150V | |
| Continuous Drain Current at 25C | 21A (Tc) | |
| Max On-State Resistance | 52 mOhm @ 18A, 10V | |
| Max Threshold Gate Voltage | 4V @ 35µA | |
| Gate Charge at Vgs | 12nC @ 10V | |
| Input Cap at Vds | 890pF @ 75V | |
| Maximum Power Handling | 57W | |
| Attachment Mounting Style | Surface Mount | |
| Component Housing Style | 8-PowerTDFN |
Description
Assesses resistance at forward current MOSFET N-Channel, Metal Oxide for LED or diode testing. Is capable of sustaining a continuous drain current (Id) of 21A (Tc) at 25°C. Supports a Vdss drain-to-source voltage rated at 150V. Includes FET category defined as MOSFET N-Channel, Metal Oxide. Maintains 12nC @ 10V gate charge at Vgs for dependable MOSFET operation. The input capacitance is specified at 890pF @ 75V at Vds for peak performance. Mounting configuration Surface Mount for structural stability. Style of the enclosure/case 8-PowerTDFN that offers mechanical and thermal protection. Maximum power capability 57W for safeguarding the device. Maximum Rds(on) at Id 12nC @ 10V for MOSFET performance. Maximum Rds(on) at Id and Vgs 52 mOhm @ 18A, 10V for MOSFET specifications. Maximum Vgs(th) at Id 4V @ 35µA for MOSFET threshold specifications.
