Attribute
Description
Manufacturer Part Number
GA20JT12-247
Description
TRANS SJT 1.2KV 20A
Manufacturer Lead Time
10 weeks

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Product Attributes

Type Description
Category
Field Effect Transistor Type Silicon Carbide, Normally Off
Drain-Source Breakdown Volts 1200V (1.2kV)
Continuous Drain Current at 25C 20A
Max On-State Resistance 70 mOhm @ 20A, 400mA
Max Threshold Gate Voltage -
Gate Charge at Vgs -
Input Cap at Vds -
Maximum Power Handling 5W
Attachment Mounting Style Through Hole
Component Housing Style TO-247-3

Description

Assesses resistance at forward current Silicon Carbide, Normally Off for LED or diode testing. Is capable of sustaining a continuous drain current (Id) of 20A at 25°C. Supports a Vdss drain-to-source voltage rated at 1200V (1.2kV). Includes FET category defined as Silicon Carbide, Normally Off. Mounting configuration Through Hole for structural stability. Style of the enclosure/case TO-247-3 that offers mechanical and thermal protection. Maximum power capability 5W for safeguarding the device. Maximum Rds(on) at Id and Vgs 70 mOhm @ 20A, 400mA for MOSFET specifications.