Attribute
Description
Manufacturer Part Number
GA04JT17-247
Manufacturer
Description
--
Manufacturer Lead Time
10 weeks
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Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Field Effect Transistor Type | Silicon Carbide, Normally Off | |
| Drain-Source Breakdown Volts | 1700V (1.7kV) | |
| Continuous Drain Current at 25C | 4A (Tc) (95°C) | |
| Max On-State Resistance | 500 mOhm @ 4A, 10V | |
| Max Threshold Gate Voltage | - | |
| Gate Charge at Vgs | - | |
| Input Cap at Vds | - | |
| Maximum Power Handling | 91W | |
| Attachment Mounting Style | Through Hole | |
| Component Housing Style | TO-247-3 |
Description
Assesses resistance at forward current Silicon Carbide, Normally Off for LED or diode testing. Is capable of sustaining a continuous drain current (Id) of 4A (Tc) (95°C) at 25°C. Supports a Vdss drain-to-source voltage rated at 1700V (1.7kV). Includes FET category defined as Silicon Carbide, Normally Off. Mounting configuration Through Hole for structural stability. Style of the enclosure/case TO-247-3 that offers mechanical and thermal protection. Maximum power capability 91W for safeguarding the device. Maximum Rds(on) at Id and Vgs 500 mOhm @ 4A, 10V for MOSFET specifications.
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