Attribute
Description
Manufacturer Part Number
2N7638-GA
Manufacturer
Description
TRANS SJT 650V 8A TO276
Manufacturer Lead Time
10 weeks
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Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Field Effect Transistor Type | Silicon Carbide, Normally Off | |
| Drain-Source Breakdown Volts | 650V | |
| Continuous Drain Current at 25C | 8A (Tc) (158°C) | |
| Max On-State Resistance | 170 mOhm @ 8A | |
| Max Threshold Gate Voltage | - | |
| Gate Charge at Vgs | - | |
| Input Cap at Vds | 720pF @ 35V | |
| Maximum Power Handling | 11W | |
| Attachment Mounting Style | Surface Mount | |
| Component Housing Style | TO-276AA |
Description
Assesses resistance at forward current Silicon Carbide, Normally Off for LED or diode testing. Is capable of sustaining a continuous drain current (Id) of 8A (Tc) (158°C) at 25°C. Supports a Vdss drain-to-source voltage rated at 650V. Includes FET category defined as Silicon Carbide, Normally Off. The input capacitance is specified at 720pF @ 35V at Vds for peak performance. Mounting configuration Surface Mount for structural stability. Style of the enclosure/case TO-276AA that offers mechanical and thermal protection. Maximum power capability 11W for safeguarding the device. Maximum Rds(on) at Id and Vgs 170 mOhm @ 8A for MOSFET specifications.
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