Attribute
Description
Manufacturer Part Number
2N7637-GA
Description
TRANS SJT 650V 7A TO-257
Manufacturer Lead Time
10 weeks

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Product Attributes

Type Description
Category
Field Effect Transistor Type Silicon Carbide, Normally Off
Drain-Source Breakdown Volts 650V
Continuous Drain Current at 25C 7A (Tc) (165°C)
Max On-State Resistance 170 mOhm @ 7A
Max Threshold Gate Voltage -
Gate Charge at Vgs -
Input Cap at Vds 720pF @ 35V
Maximum Power Handling 8W
Attachment Mounting Style Through Hole
Component Housing Style TO-257-3

Description

Assesses resistance at forward current Silicon Carbide, Normally Off for LED or diode testing. Is capable of sustaining a continuous drain current (Id) of 7A (Tc) (165°C) at 25°C. Supports a Vdss drain-to-source voltage rated at 650V. Includes FET category defined as Silicon Carbide, Normally Off. The input capacitance is specified at 720pF @ 35V at Vds for peak performance. Mounting configuration Through Hole for structural stability. Style of the enclosure/case TO-257-3 that offers mechanical and thermal protection. Maximum power capability 8W for safeguarding the device. Maximum Rds(on) at Id and Vgs 170 mOhm @ 7A for MOSFET specifications.