Attribute
Description
Manufacturer Part Number
MRFG35003N6AT1
Manufacturer
Description
TRANSISTOR RF 3W 6V PLD-1.5
Manufacturer Lead Time
1 week
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Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Transistor Class | pHEMT FET | |
| Oscillation Rate Hz | 3.55GHz | |
| Amplification Factor | 10dB | |
| Test Condition Voltage | 6V | |
| Rated Current | 2.9A | |
| Signal-to-Noise Degradation | - | |
| Testing Current Value | 180mA | |
| Output Wattage Rating | 3W | |
| Rated Operating Voltage | 8V | |
| Component Housing Style | PLD-1.5 |
Description
Assesses resistance at forward current 10dB for LED or diode testing. Assessed at current levels outlined by 180mA. Indicates a current rating of 2.9A. Runs at a frequency of 3.55GHz. Delivers 10dB gain to enhance signal amplification effectiveness. Style of the enclosure/case PLD-1.5 that offers mechanical and thermal protection. The necessary output power 3W for peak device efficiency. Classification of transistor pHEMT FET for circuit design. Maximum Vce(on) at Vge 10dB for transistor specifications. The operating voltage rating of the device 8V. Voltage 6V applied during component testing.
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