Attribute
Description
Manufacturer Part Number
MRFE6VP6300HR5
Description
FET RF 2N-CH 230MHZ 50V NI780-4
Manufacturer Lead Time
1 week

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Product Attributes

Type Description
Category
Transistor Class LDMOS (Dual)
Oscillation Rate Hz 230MHz
Amplification Factor 26.5dB
Test Condition Voltage 50V
Rated Current -
Signal-to-Noise Degradation -
Testing Current Value 100mA
Output Wattage Rating 300W
Rated Operating Voltage 125V
Component Housing Style NI-780-4

Description

Assesses resistance at forward current 26.5dB for LED or diode testing. Assessed at current levels outlined by 100mA. Runs at a frequency of 230MHz. Delivers 26.5dB gain to enhance signal amplification effectiveness. Style of the enclosure/case NI-780-4 that offers mechanical and thermal protection. The necessary output power 300W for peak device efficiency. Classification of transistor LDMOS (Dual) for circuit design. Maximum Vce(on) at Vge 26.5dB for transistor specifications. The operating voltage rating of the device 125V. Voltage 50V applied during component testing.