Attribute
Description
Manufacturer Part Number
MRFE6VP100HR5
Manufacturer
Description
TRANS RF H-CH FET LDMOS NI780
Manufacturer Lead Time
1 week
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Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Transistor Class | LDMOS | |
| Oscillation Rate Hz | 1.8MHz ~ 2GHz | |
| Amplification Factor | 26dB | |
| Test Condition Voltage | 50V | |
| Rated Current | - | |
| Signal-to-Noise Degradation | - | |
| Testing Current Value | 100mA | |
| Output Wattage Rating | 100W | |
| Rated Operating Voltage | 133V | |
| Component Housing Style | NI-780-4 |
Description
Assesses resistance at forward current 26dB for LED or diode testing. Assessed at current levels outlined by 100mA. Runs at a frequency of 1.8MHz ~ 2GHz. Delivers 26dB gain to enhance signal amplification effectiveness. Style of the enclosure/case NI-780-4 that offers mechanical and thermal protection. The necessary output power 100W for peak device efficiency. Classification of transistor LDMOS for circuit design. Maximum Vce(on) at Vge 26dB for transistor specifications. The operating voltage rating of the device 133V. Voltage 50V applied during component testing.
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