Attribute
Description
Manufacturer Part Number
FDMD8900
Description
MOSFET 2N-CH 30V 19A/17A 12POWER
Manufacturer Lead Time
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Product Attributes

Type Description
Category
Import Duty Classification -
Product Series Line -
IC Encapsulation Type Bulk
Availability Status Active
Core Technology Platform MOSFET (Metal Oxide)
Setup Arrangement 2 N-Channel (Dual)
Transistor Special Function -
Drain-Source Breakdown Volts 30V
Continuous Drain Current at 25C 19A, 17A
Max On-State Resistance 4mOhm @ 19A, 10V
Max Threshold Gate Voltage 2.5V @ 250µA
Max Gate Charge at Vgs 35nC @ 10V
Max Input Cap at Vds 2605pF @ 15V
Maximum Power Handling 2.1W
Ambient Temp Range -55°C ~ 150°C (TJ)
Quality Grade Level -
Certification Qualification -
Attachment Mounting Style Surface Mount
Component Housing Style 12-PowerWDFN
Vendor Package Type 12-Power3.3x5

Description

Configured in a manner identified as 2 N-Channel (Dual). Is capable of sustaining a continuous drain current (Id) of 19A, 17A at 25°C. Supports a Vdss drain-to-source voltage rated at 30V. Ensures maximum 35nC @ 10V gate charge at Vgs for improved switching efficiency. Maintains 35nC @ 10V gate charge at Vgs for dependable MOSFET operation. The maximum input capacitance reaches 2605pF @ 15V at Vds to protect the device. The input capacitance is specified at 2605pF @ 15V at Vds for peak performance. Mounting configuration Surface Mount for structural stability. Temperature range -55°C ~ 150°C (TJ) for environmental conditions impacting thermal efficiency. Type of housing Bulk for safeguarding or transporting components. Style of the enclosure/case 12-PowerWDFN that offers mechanical and thermal protection. Type of package 12-Power3.3x5 that preserves the integrity of the device. Maximum power capability 2.1W for safeguarding the device. Product status Active concerning availability and lifecycle. Maximum Rds(on) at Id 35nC @ 10V for MOSFET performance. Maximum Rds(on) at Id and Vgs 4mOhm @ 19A, 10V for MOSFET specifications. Supplier package type 12-Power3.3x5 for component selection. The primary technology platform MOSFET (Metal Oxide) linked to the product category. Maximum Vgs(th) at Id 2.5V @ 250µA for MOSFET threshold specifications.