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Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Field Effect Transistor Type | GaNFET N-Channel, Gallium Nitride | |
| Drain-Source Breakdown Volts | 65V | |
| Continuous Drain Current at 25C | 2A (Ta) | |
| Max On-State Resistance | 530 mOhm @ 500mA, 5V | |
| Max Threshold Gate Voltage | 2.5V @ 250µA | |
| Gate Charge at Vgs | - | |
| Input Cap at Vds | 21pF @ 32.5V | |
| Maximum Power Handling | - | |
| Attachment Mounting Style | Surface Mount | |
| Component Housing Style | Die |
Description
Assesses resistance at forward current GaNFET N-Channel, Gallium Nitride for LED or diode testing. Is capable of sustaining a continuous drain current (Id) of 2A (Ta) at 25°C. Supports a Vdss drain-to-source voltage rated at 65V. Includes FET category defined as GaNFET N-Channel, Gallium Nitride. The input capacitance is specified at 21pF @ 32.5V at Vds for peak performance. Mounting configuration Surface Mount for structural stability. Style of the enclosure/case Die that offers mechanical and thermal protection. Maximum Rds(on) at Id and Vgs 530 mOhm @ 500mA, 5V for MOSFET specifications. Maximum Vgs(th) at Id 2.5V @ 250µA for MOSFET threshold specifications.
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