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Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Field Effect Transistor Type | GaNFET N-Channel, Gallium Nitride | |
| Drain-Source Breakdown Volts | 200V | |
| Continuous Drain Current at 25C | 12A (Ta) | |
| Max On-State Resistance | 25 mOhm @ 6A, 5V | |
| Max Threshold Gate Voltage | 2.5V @ 3mA | |
| Gate Charge at Vgs | 5nC @ 5V | |
| Input Cap at Vds | 480pF @ 100V | |
| Maximum Power Handling | - | |
| Attachment Mounting Style | Surface Mount | |
| Component Housing Style | Die |
Description
Assesses resistance at forward current GaNFET N-Channel, Gallium Nitride for LED or diode testing. Is capable of sustaining a continuous drain current (Id) of 12A (Ta) at 25°C. Supports a Vdss drain-to-source voltage rated at 200V. Includes FET category defined as GaNFET N-Channel, Gallium Nitride. Maintains 5nC @ 5V gate charge at Vgs for dependable MOSFET operation. The input capacitance is specified at 480pF @ 100V at Vds for peak performance. Mounting configuration Surface Mount for structural stability. Style of the enclosure/case Die that offers mechanical and thermal protection. Maximum Rds(on) at Id 5nC @ 5V for MOSFET performance. Maximum Rds(on) at Id and Vgs 25 mOhm @ 6A, 5V for MOSFET specifications. Maximum Vgs(th) at Id 2.5V @ 3mA for MOSFET threshold specifications.
