Attribute
Description
Manufacturer Part Number
EPC2221
Manufacturer
Description
MOSFET 2N-CH 100V 5A DIE
Manufacturer Lead Time
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Product Attributes

Type Description
Category
Import Duty Classification -
Product Series Line -
IC Encapsulation Type Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Availability Status Active
Core Technology Platform GaNFET (Gallium Nitride)
Setup Arrangement 2 N-Channel (Dual) Common Source
Transistor Special Function -
Drain-Source Breakdown Volts 100V
Continuous Drain Current at 25C 5A
Max On-State Resistance -
Max Threshold Gate Voltage -
Max Gate Charge at Vgs -
Max Input Cap at Vds -
Maximum Power Handling -
Ambient Temp Range 150°C (TJ)
Quality Grade Level -
Certification Qualification -
Attachment Mounting Style Surface Mount
Component Housing Style Die
Vendor Package Type Die

Description

Configured in a manner identified as 2 N-Channel (Dual) Common Source. Is capable of sustaining a continuous drain current (Id) of 5A at 25°C. Supports a Vdss drain-to-source voltage rated at 100V. Mounting configuration Surface Mount for structural stability. Temperature range 150°C (TJ) for environmental conditions impacting thermal efficiency. Type of housing Tape & Reel (TR)Cut Tape (CT)Digi-Reel® for safeguarding or transporting components. Style of the enclosure/case Die that offers mechanical and thermal protection. Type of package Die that preserves the integrity of the device. Product status Active concerning availability and lifecycle. Supplier package type Die for component selection. The primary technology platform GaNFET (Gallium Nitride) linked to the product category.