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Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Import Duty Classification | - | |
| Product Series Line | - | |
| IC Encapsulation Type | Tape & Reel (TR)Cut Tape (CT)Digi-Reel® | |
| Availability Status | Last Time Buy | |
| Core Technology Platform | GaNFET (Gallium Nitride) | |
| Setup Arrangement | 2 N-Channel (Half Bridge) | |
| Transistor Special Function | - | |
| Drain-Source Breakdown Volts | 30V | |
| Continuous Drain Current at 25C | 16A (Ta) | |
| Max On-State Resistance | 19mOhm @ 15A, 5V, 8mOhm @ 15A, 5V | |
| Max Threshold Gate Voltage | 2.5V @ 2mA, 2.5V @ 5mA | |
| Max Gate Charge at Vgs | 2.2nC @ 5V, 5.8nC @ 5V | |
| Max Input Cap at Vds | 230pF @ 15V, 595pF @ 15V | |
| Maximum Power Handling | - | |
| Ambient Temp Range | -40°C ~ 150°C (TJ) | |
| Quality Grade Level | - | |
| Certification Qualification | - | |
| Attachment Mounting Style | Surface Mount | |
| Component Housing Style | Die | |
| Vendor Package Type | Die |
Description
Configured in a manner identified as 2 N-Channel (Half Bridge). Is capable of sustaining a continuous drain current (Id) of 16A (Ta) at 25°C. Supports a Vdss drain-to-source voltage rated at 30V. Ensures maximum 2.2nC @ 5V, 5.8nC @ 5V gate charge at Vgs for improved switching efficiency. Maintains 2.2nC @ 5V, 5.8nC @ 5V gate charge at Vgs for dependable MOSFET operation. The maximum input capacitance reaches 230pF @ 15V, 595pF @ 15V at Vds to protect the device. The input capacitance is specified at 230pF @ 15V, 595pF @ 15V at Vds for peak performance. Mounting configuration Surface Mount for structural stability. Temperature range -40°C ~ 150°C (TJ) for environmental conditions impacting thermal efficiency. Type of housing Tape & Reel (TR)Cut Tape (CT)Digi-Reel® for safeguarding or transporting components. Style of the enclosure/case Die that offers mechanical and thermal protection. Type of package Die that preserves the integrity of the device. Product status Last Time Buy concerning availability and lifecycle. Maximum Rds(on) at Id 2.2nC @ 5V, 5.8nC @ 5V for MOSFET performance. Maximum Rds(on) at Id and Vgs 19mOhm @ 15A, 5V, 8mOhm @ 15A, 5V for MOSFET specifications. Supplier package type Die for component selection. The primary technology platform GaNFET (Gallium Nitride) linked to the product category. Maximum Vgs(th) at Id 2.5V @ 2mA, 2.5V @ 5mA for MOSFET threshold specifications.
