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Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Import Duty Classification | - | |
| Product Series Line | eGaN® | |
| IC Encapsulation Type | Tape & Reel (TR)Cut Tape (CT)Digi-Reel® | |
| Availability Status | Last Time Buy | |
| Core Technology Platform | GaNFET (Gallium Nitride) | |
| Setup Arrangement | 3 N-Channel (Half Bridge + Synchronous Bootstrap) | |
| Transistor Special Function | - | |
| Drain-Source Breakdown Volts | 100V | |
| Continuous Drain Current at 25C | 1.7A, 500mA | |
| Max On-State Resistance | 320mOhm @ 2A, 5V, 3.3Ohm @ 2A, 5V | |
| Max Threshold Gate Voltage | 2.5V @ 100µA, 2.5V @ 20µA | |
| Max Gate Charge at Vgs | 0.16nC @ 5V, 0.044nC @ 5V | |
| Max Input Cap at Vds | 16pF @ 50V, 7pF @ 50V | |
| Maximum Power Handling | - | |
| Ambient Temp Range | -40°C ~ 150°C (TJ) | |
| Quality Grade Level | - | |
| Certification Qualification | - | |
| Attachment Mounting Style | Surface Mount | |
| Component Housing Style | 9-VFBGA | |
| Vendor Package Type | 9-BGA (1.35x1.35) |
Description
Configured in a manner identified as 3 N-Channel (Half Bridge + Synchronous Bootstrap). Is capable of sustaining a continuous drain current (Id) of 1.7A, 500mA at 25°C. Supports a Vdss drain-to-source voltage rated at 100V. Ensures maximum 0.16nC @ 5V, 0.044nC @ 5V gate charge at Vgs for improved switching efficiency. Maintains 0.16nC @ 5V, 0.044nC @ 5V gate charge at Vgs for dependable MOSFET operation. The maximum input capacitance reaches 16pF @ 50V, 7pF @ 50V at Vds to protect the device. The input capacitance is specified at 16pF @ 50V, 7pF @ 50V at Vds for peak performance. Mounting configuration Surface Mount for structural stability. Temperature range -40°C ~ 150°C (TJ) for environmental conditions impacting thermal efficiency. Type of housing Tape & Reel (TR)Cut Tape (CT)Digi-Reel® for safeguarding or transporting components. Style of the enclosure/case 9-VFBGA that offers mechanical and thermal protection. Type of package 9-BGA (1.35x1.35) that preserves the integrity of the device. Product status Last Time Buy concerning availability and lifecycle. Maximum Rds(on) at Id 0.16nC @ 5V, 0.044nC @ 5V for MOSFET performance. Maximum Rds(on) at Id and Vgs 320mOhm @ 2A, 5V, 3.3Ohm @ 2A, 5V for MOSFET specifications. Classification series for the product or component eGaN®. Supplier package type 9-BGA (1.35x1.35) for component selection. The primary technology platform GaNFET (Gallium Nitride) linked to the product category. Maximum Vgs(th) at Id 2.5V @ 100µA, 2.5V @ 20µA for MOSFET threshold specifications.
