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Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Import Duty Classification | - | |
| Product Series Line | eGaN® | |
| IC Encapsulation Type | Tape & Reel (TR) | |
| Core Technology Platform | GaNFET (Gallium Nitride) | |
| Setup Arrangement | 2 N-Channel (Half Bridge) | |
| Transistor Special Function | - | |
| Drain-Source Breakdown Volts | 60V | |
| Continuous Drain Current at 25C | 23A (Tj) | |
| Max On-State Resistance | 4.4mOhm @ 20A, 5V | |
| Max Threshold Gate Voltage | 2.5V @ 7mA | |
| Max Gate Charge at Vgs | 6.8nC @ 5V | |
| Max Input Cap at Vds | 830pF @ 30V | |
| Maximum Power Handling | - | |
| Ambient Temp Range | -40°C ~ 150°C (TJ) | |
| Quality Grade Level | - | |
| Certification Qualification | - | |
| Attachment Mounting Style | Surface Mount | |
| Component Housing Style | Die | |
| Vendor Package Type | Die |
Description
Configured in a manner identified as 2 N-Channel (Half Bridge). Is capable of sustaining a continuous drain current (Id) of 23A (Tj) at 25°C. Supports a Vdss drain-to-source voltage rated at 60V. Ensures maximum 6.8nC @ 5V gate charge at Vgs for improved switching efficiency. Maintains 6.8nC @ 5V gate charge at Vgs for dependable MOSFET operation. The maximum input capacitance reaches 830pF @ 30V at Vds to protect the device. The input capacitance is specified at 830pF @ 30V at Vds for peak performance. Mounting configuration Surface Mount for structural stability. Temperature range -40°C ~ 150°C (TJ) for environmental conditions impacting thermal efficiency. Type of housing Tape & Reel (TR) for safeguarding or transporting components. Style of the enclosure/case Die that offers mechanical and thermal protection. Type of package Die that preserves the integrity of the device. Maximum Rds(on) at Id 6.8nC @ 5V for MOSFET performance. Maximum Rds(on) at Id and Vgs 4.4mOhm @ 20A, 5V for MOSFET specifications. Classification series for the product or component eGaN®. Supplier package type Die for component selection. The primary technology platform GaNFET (Gallium Nitride) linked to the product category. Maximum Vgs(th) at Id 2.5V @ 7mA for MOSFET threshold specifications.
