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Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Import Duty Classification | - | |
| Product Series Line | eGaN® | |
| IC Encapsulation Type | Tape & Reel (TR) | |
| Availability Status | Obsolete | |
| Core Technology Platform | GaNFET (Gallium Nitride) | |
| Setup Arrangement | 2 N-Channel (Half Bridge) | |
| Transistor Special Function | - | |
| Drain-Source Breakdown Volts | 30V | |
| Continuous Drain Current at 25C | 10A (Ta), 40A (Ta) | |
| Max On-State Resistance | 8.2mOhm @ 25A, 5V, 2.1mOhm @ 25A, 5V | |
| Max Threshold Gate Voltage | 2.5V @ 4mA, 2.5V @ 16mA | |
| Max Gate Charge at Vgs | 4.9nC @ 15V, 19nC @ 15V | |
| Max Input Cap at Vds | 475pF @ 15V, 1960pF @ 15V | |
| Maximum Power Handling | - | |
| Ambient Temp Range | -40°C ~ 150°C (TJ) | |
| Quality Grade Level | - | |
| Certification Qualification | - | |
| Attachment Mounting Style | Surface Mount | |
| Component Housing Style | Die | |
| Vendor Package Type | Die |
Description
Configured in a manner identified as 2 N-Channel (Half Bridge). Is capable of sustaining a continuous drain current (Id) of 10A (Ta), 40A (Ta) at 25°C. Supports a Vdss drain-to-source voltage rated at 30V. Ensures maximum 4.9nC @ 15V, 19nC @ 15V gate charge at Vgs for improved switching efficiency. Maintains 4.9nC @ 15V, 19nC @ 15V gate charge at Vgs for dependable MOSFET operation. The maximum input capacitance reaches 475pF @ 15V, 1960pF @ 15V at Vds to protect the device. The input capacitance is specified at 475pF @ 15V, 1960pF @ 15V at Vds for peak performance. Mounting configuration Surface Mount for structural stability. Temperature range -40°C ~ 150°C (TJ) for environmental conditions impacting thermal efficiency. Type of housing Tape & Reel (TR) for safeguarding or transporting components. Style of the enclosure/case Die that offers mechanical and thermal protection. Type of package Die that preserves the integrity of the device. Product status Obsolete concerning availability and lifecycle. Maximum Rds(on) at Id 4.9nC @ 15V, 19nC @ 15V for MOSFET performance. Maximum Rds(on) at Id and Vgs 8.2mOhm @ 25A, 5V, 2.1mOhm @ 25A, 5V for MOSFET specifications. Classification series for the product or component eGaN®. Supplier package type Die for component selection. The primary technology platform GaNFET (Gallium Nitride) linked to the product category. Maximum Vgs(th) at Id 2.5V @ 4mA, 2.5V @ 16mA for MOSFET threshold specifications.
