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Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Field Effect Transistor Type | MOSFET P-Channel, Metal Oxide | |
| Drain-Source Breakdown Volts | 60V | |
| Continuous Drain Current at 25C | 160mA (Ta) | |
| Max On-State Resistance | 14 Ohm @ 200mA, 10V | |
| Max Threshold Gate Voltage | 3.5V @ 1mA | |
| Gate Charge at Vgs | - | |
| Input Cap at Vds | 50pF @ 18V | |
| Maximum Power Handling | 625mW | |
| Attachment Mounting Style | Through Hole | |
| Component Housing Style | TO-226-3, TO-92-3 (TO-226AA) |
Description
Assesses resistance at forward current MOSFET P-Channel, Metal Oxide for LED or diode testing. Is capable of sustaining a continuous drain current (Id) of 160mA (Ta) at 25°C. Supports a Vdss drain-to-source voltage rated at 60V. Includes FET category defined as MOSFET P-Channel, Metal Oxide. The input capacitance is specified at 50pF @ 18V at Vds for peak performance. Mounting configuration Through Hole for structural stability. Style of the enclosure/case TO-226-3, TO-92-3 (TO-226AA) that offers mechanical and thermal protection. Maximum power capability 625mW for safeguarding the device. Maximum Rds(on) at Id and Vgs 14 Ohm @ 200mA, 10V for MOSFET specifications. Maximum Vgs(th) at Id 3.5V @ 1mA for MOSFET threshold specifications.