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Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Field Effect Transistor Type | MOSFET P-Channel, Metal Oxide | |
| Drain-Source Breakdown Volts | 20V | |
| Continuous Drain Current at 25C | 770mA (Ta) | |
| Max On-State Resistance | 495 mOhm @ 400mA, 4.5V | |
| Max Threshold Gate Voltage | 700mV @ 250µA | |
| Gate Charge at Vgs | 1.54nC @ 8V | |
| Input Cap at Vds | 80pF @ 10V | |
| Maximum Power Handling | 430mW | |
| Attachment Mounting Style | Surface Mount | |
| Component Housing Style | 3-XFDFN |
Description
Assesses resistance at forward current MOSFET P-Channel, Metal Oxide for LED or diode testing. Is capable of sustaining a continuous drain current (Id) of 770mA (Ta) at 25°C. Supports a Vdss drain-to-source voltage rated at 20V. Includes FET category defined as MOSFET P-Channel, Metal Oxide. Maintains 1.54nC @ 8V gate charge at Vgs for dependable MOSFET operation. The input capacitance is specified at 80pF @ 10V at Vds for peak performance. Mounting configuration Surface Mount for structural stability. Style of the enclosure/case 3-XFDFN that offers mechanical and thermal protection. Maximum power capability 430mW for safeguarding the device. Maximum Rds(on) at Id 1.54nC @ 8V for MOSFET performance. Maximum Rds(on) at Id and Vgs 495 mOhm @ 400mA, 4.5V for MOSFET specifications. Maximum Vgs(th) at Id 700mV @ 250µA for MOSFET threshold specifications.
