Description

Assesses resistance at forward current MOSFET P-Channel, Metal Oxide for LED or diode testing. Is capable of sustaining a continuous drain current (Id) of 130mA (Ta) at 25°C. Supports a Vdss drain-to-source voltage rated at 50V. Includes FET category defined as MOSFET P-Channel, Metal Oxide. The input capacitance is specified at 45pF @ 25V at Vds for peak performance. Mounting configuration Surface Mount for structural stability. Style of the enclosure/case SC-70, SOT-323 that offers mechanical and thermal protection. Maximum power capability 200mW for safeguarding the device. Maximum Rds(on) at Id and Vgs 10 Ohm @ 100mA, 5V for MOSFET specifications. Maximum Vgs(th) at Id 2V @ 1mA for MOSFET threshold specifications.