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Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Field Effect Transistor Type | MOSFET P-Channel, Metal Oxide | |
| Drain-Source Breakdown Volts | 50V | |
| Continuous Drain Current at 25C | 130mA (Ta) | |
| Max On-State Resistance | 10 Ohm @ 100mA, 5V | |
| Max Threshold Gate Voltage | 2V @ 1mA | |
| Gate Charge at Vgs | - | |
| Input Cap at Vds | 45pF @ 25V | |
| Maximum Power Handling | 300mW | |
| Attachment Mounting Style | Surface Mount | |
| Component Housing Style | TO-236-3, SC-59, SOT-23-3 |
Description
Assesses resistance at forward current MOSFET P-Channel, Metal Oxide for LED or diode testing. Is capable of sustaining a continuous drain current (Id) of 130mA (Ta) at 25°C. Supports a Vdss drain-to-source voltage rated at 50V. Includes FET category defined as MOSFET P-Channel, Metal Oxide. The input capacitance is specified at 45pF @ 25V at Vds for peak performance. Mounting configuration Surface Mount for structural stability. Style of the enclosure/case TO-236-3, SC-59, SOT-23-3 that offers mechanical and thermal protection. Maximum power capability 300mW for safeguarding the device. Maximum Rds(on) at Id and Vgs 10 Ohm @ 100mA, 5V for MOSFET specifications. Maximum Vgs(th) at Id 2V @ 1mA for MOSFET threshold specifications.
