Attribute
Description
Manufacturer Part Number
CAS100H12AM1
Manufacturer
Description
--
Manufacturer Lead Time
1 week

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Product Attributes

Type Description
Category
Field Effect Transistor Type 2 N-Channel (Half Bridge)
Drain-Source Breakdown Volts 1200V (1.2kV)
Continuous Drain Current at 25C 165A
Max On-State Resistance 20 mOhm @ 20A, 20V
Max Threshold Gate Voltage 3.1V @ 50mA
Gate Charge at Vgs -
Input Cap at Vds 9500pF @ 800V
Maximum Power Handling -
Attachment Mounting Style Chassis Mount
Component Housing Style Module

Description

Assesses resistance at forward current 2 N-Channel (Half Bridge) for LED or diode testing. Is capable of sustaining a continuous drain current (Id) of 165A at 25°C. Supports a Vdss drain-to-source voltage rated at 1200V (1.2kV). Includes FET category defined as 2 N-Channel (Half Bridge). The input capacitance is specified at 9500pF @ 800V at Vds for peak performance. Mounting configuration Chassis Mount for structural stability. Style of the enclosure/case Module that offers mechanical and thermal protection. Maximum Rds(on) at Id and Vgs 20 mOhm @ 20A, 20V for MOSFET specifications. Maximum Vgs(th) at Id 3.1V @ 50mA for MOSFET threshold specifications.