Attribute
Description
Manufacturer Part Number
CAS100H12AM1
Manufacturer
Description
--
Manufacturer Lead Time
1 week
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Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Field Effect Transistor Type | 2 N-Channel (Half Bridge) | |
| Drain-Source Breakdown Volts | 1200V (1.2kV) | |
| Continuous Drain Current at 25C | 165A | |
| Max On-State Resistance | 20 mOhm @ 20A, 20V | |
| Max Threshold Gate Voltage | 3.1V @ 50mA | |
| Gate Charge at Vgs | - | |
| Input Cap at Vds | 9500pF @ 800V | |
| Maximum Power Handling | - | |
| Attachment Mounting Style | Chassis Mount | |
| Component Housing Style | Module |
Description
Assesses resistance at forward current 2 N-Channel (Half Bridge) for LED or diode testing. Is capable of sustaining a continuous drain current (Id) of 165A at 25°C. Supports a Vdss drain-to-source voltage rated at 1200V (1.2kV). Includes FET category defined as 2 N-Channel (Half Bridge). The input capacitance is specified at 9500pF @ 800V at Vds for peak performance. Mounting configuration Chassis Mount for structural stability. Style of the enclosure/case Module that offers mechanical and thermal protection. Maximum Rds(on) at Id and Vgs 20 mOhm @ 20A, 20V for MOSFET specifications. Maximum Vgs(th) at Id 3.1V @ 50mA for MOSFET threshold specifications.
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