Attribute
Description
Manufacturer Part Number
VMMK-1218-TR1G
Manufacturer
Description
Diodes - FETs,
E-pHEMT,
10GHz,
3V,
20mA
Manufacturer Lead Time
1 week
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Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Transistor Class | E-pHEMT | |
| Oscillation Rate Hz | 10GHz | |
| Amplification Factor | 9dB | |
| Test Condition Voltage | 3V | |
| Rated Current | 100mA | |
| Signal-to-Noise Degradation | 0.81dB | |
| Testing Current Value | 20mA | |
| Output Wattage Rating | 12dBm | |
| Rated Operating Voltage | 5V | |
| Component Housing Style | 0402 (1005 Metric) |
Description
Assesses resistance at forward current 9dB for LED or diode testing. Assessed at current levels outlined by 20mA. Indicates a current rating of 100mA. Runs at a frequency of 10GHz. Delivers 9dB gain to enhance signal amplification effectiveness. Noise level 0.81dB affecting amplifier or RF performance. Style of the enclosure/case 0402 (1005 Metric) that offers mechanical and thermal protection. The necessary output power 12dBm for peak device efficiency. Classification of transistor E-pHEMT for circuit design. Maximum Vce(on) at Vge 9dB for transistor specifications. The operating voltage rating of the device 5V. Voltage 3V applied during component testing.
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