Attribute
Description
Manufacturer Part Number
VMMK-1218-TR1G
Description
Diodes - FETs, E-pHEMT, 10GHz, 3V, 20mA
Manufacturer Lead Time
1 week

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Product Attributes

Type Description
Category
Transistor Class E-pHEMT
Oscillation Rate Hz 10GHz
Amplification Factor 9dB
Test Condition Voltage 3V
Rated Current 100mA
Signal-to-Noise Degradation 0.81dB
Testing Current Value 20mA
Output Wattage Rating 12dBm
Rated Operating Voltage 5V
Component Housing Style 0402 (1005 Metric)

Description

Assesses resistance at forward current 9dB for LED or diode testing. Assessed at current levels outlined by 20mA. Indicates a current rating of 100mA. Runs at a frequency of 10GHz. Delivers 9dB gain to enhance signal amplification effectiveness. Noise level 0.81dB affecting amplifier or RF performance. Style of the enclosure/case 0402 (1005 Metric) that offers mechanical and thermal protection. The necessary output power 12dBm for peak device efficiency. Classification of transistor E-pHEMT for circuit design. Maximum Vce(on) at Vge 9dB for transistor specifications. The operating voltage rating of the device 5V. Voltage 3V applied during component testing.