Attribute
Description
Manufacturer Part Number
AM4910N
Manufacturer
Description
MOSFET 2N-CH 30V 11A SO-8
Manufacturer Lead Time
12 weeks
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Stock:

Distributor: 118

Quantity Unit Price Ext. Price
287 ₹ 55.63000 ₹ 15,965.81
57 ₹ 62.30000 ₹ 3,551.10
1 ₹ 133.50000 ₹ 133.50

Product Attributes

Type Description
Category
Import Duty Classification -
Product Series Line -
IC Encapsulation Type Bulk
Availability Status Active
Core Technology Platform MOSFET (Metal Oxide)
Setup Arrangement 2 N-Channel (Dual)
Transistor Special Function -
Drain-Source Breakdown Volts 30V
Continuous Drain Current at 25C 10A (Ta)
Max On-State Resistance 13.5mOhm @ 10A, 10V
Max Threshold Gate Voltage 1V @ 250µA
Max Gate Charge at Vgs 20nC @ 5V
Max Input Cap at Vds -
Maximum Power Handling 2.1W (Ta)
Ambient Temp Range -55°C ~ 150°C (TJ)
Quality Grade Level -
Certification Qualification -
Attachment Mounting Style Surface Mount
Component Housing Style PowerPAK® SO-8
Vendor Package Type 8-SO

Description

Configured in a manner identified as 2 N-Channel (Dual). Is capable of sustaining a continuous drain current (Id) of 10A (Ta) at 25°C. Supports a Vdss drain-to-source voltage rated at 30V. Ensures maximum 20nC @ 5V gate charge at Vgs for improved switching efficiency. Maintains 20nC @ 5V gate charge at Vgs for dependable MOSFET operation. Mounting configuration Surface Mount for structural stability. Temperature range -55°C ~ 150°C (TJ) for environmental conditions impacting thermal efficiency. Type of housing Bulk for safeguarding or transporting components. Style of the enclosure/case PowerPAK® SO-8 that offers mechanical and thermal protection. Type of package 8-SO that preserves the integrity of the device. Maximum power capability 2.1W (Ta) for safeguarding the device. Product status Active concerning availability and lifecycle. Maximum Rds(on) at Id 20nC @ 5V for MOSFET performance. Maximum Rds(on) at Id and Vgs 13.5mOhm @ 10A, 10V for MOSFET specifications. Supplier package type 8-SO for component selection. The primary technology platform MOSFET (Metal Oxide) linked to the product category. Maximum Vgs(th) at Id 1V @ 250µA for MOSFET threshold specifications.