Attribute
Description
Manufacturer Part Number
AONR26309A
Description
MOSFET N/P-CH 30V 6.5A 8DFN
Manufacturer Lead Time
14 weeks
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Stock:

Distributor: 117

Quantity Unit Price Ext. Price
35000 ₹ 14.46000 ₹ 5,06,100.00
25000 ₹ 14.48000 ₹ 3,62,000.00
15000 ₹ 15.23000 ₹ 2,28,450.00
10000 ₹ 15.90000 ₹ 1,59,000.00
5000 ₹ 17.21000 ₹ 86,050.00

Product Attributes

Type Description
Category
Import Duty Classification -
Product Series Line -
IC Encapsulation Type Tape & Reel (TR)
Availability Status Active
Core Technology Platform MOSFET (Metal Oxide)
Setup Arrangement N and P-Channel, Common Drain (Complementary)
Transistor Special Function -
Drain-Source Breakdown Volts 30V
Continuous Drain Current at 25C 6.5A (Ta), 14A (Tc), 5.7A (Ta), 21A (Tc)
Max On-State Resistance 20mOhm @ 6.5A, 10V, 32mOhm @ 5.7A, 10V
Max Threshold Gate Voltage 2.3V @ 250µA, 2.2V @ 250µA
Max Gate Charge at Vgs 20nC @ 10V
Max Input Cap at Vds 600pF @ 15V, 1100pF @ 15V
Maximum Power Handling 1.5W (Ta), 7W (Tc), 1.5W (Ta), 20.8W (Tc)
Ambient Temp Range -55°C ~ 150°C (TJ)
Quality Grade Level -
Certification Qualification -
Attachment Mounting Style Surface Mount
Component Housing Style 8-PowerVDFN
Vendor Package Type 8-DFN-EP (3x3)

Description

Configured in a manner identified as N and P-Channel, Common Drain (Complementary). Is capable of sustaining a continuous drain current (Id) of 6.5A (Ta), 14A (Tc), 5.7A (Ta), 21A (Tc) at 25°C. Supports a Vdss drain-to-source voltage rated at 30V. Ensures maximum 20nC @ 10V gate charge at Vgs for improved switching efficiency. Maintains 20nC @ 10V gate charge at Vgs for dependable MOSFET operation. The maximum input capacitance reaches 600pF @ 15V, 1100pF @ 15V at Vds to protect the device. The input capacitance is specified at 600pF @ 15V, 1100pF @ 15V at Vds for peak performance. Mounting configuration Surface Mount for structural stability. Temperature range -55°C ~ 150°C (TJ) for environmental conditions impacting thermal efficiency. Type of housing Tape & Reel (TR) for safeguarding or transporting components. Style of the enclosure/case 8-PowerVDFN that offers mechanical and thermal protection. Type of package 8-DFN-EP (3x3) that preserves the integrity of the device. Maximum power capability 1.5W (Ta), 7W (Tc), 1.5W (Ta), 20.8W (Tc) for safeguarding the device. Product status Active concerning availability and lifecycle. Maximum Rds(on) at Id 20nC @ 10V for MOSFET performance. Maximum Rds(on) at Id and Vgs 20mOhm @ 6.5A, 10V, 32mOhm @ 5.7A, 10V for MOSFET specifications. Supplier package type 8-DFN-EP (3x3) for component selection. The primary technology platform MOSFET (Metal Oxide) linked to the product category. Maximum Vgs(th) at Id 2.3V @ 250µA, 2.2V @ 250µA for MOSFET threshold specifications.