Stock:
Distributor: 117
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 9000 | ₹ 32.71000 | ₹ 2,94,390.00 |
| 6000 | ₹ 33.84000 | ₹ 2,03,040.00 |
| 3000 | ₹ 36.40000 | ₹ 1,09,200.00 |
Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Import Duty Classification | - | |
| Product Series Line | - | |
| IC Encapsulation Type | Tape & Reel (TR) | |
| Availability Status | Active | |
| Core Technology Platform | MOSFET (Metal Oxide) | |
| Setup Arrangement | 2 N-Channel (Dual) Common Drain | |
| Transistor Special Function | - | |
| Drain-Source Breakdown Volts | 30V | |
| Continuous Drain Current at 25C | 26A (Ta), 100A (Tc), 27A (Ta), 103A (Tc) | |
| Max On-State Resistance | 3.2mOhm @ 20A, 10V, 3mOhm @ 20A, 10V | |
| Max Threshold Gate Voltage | 2.1V @ 250µA | |
| Max Gate Charge at Vgs | 40nC @ 10V | |
| Max Input Cap at Vds | 1700pF @ 15V, 1650pF @ 15V | |
| Maximum Power Handling | 3.3W (Ta), 50W (Tc) | |
| Ambient Temp Range | -55°C ~ 150°C (TJ) | |
| Quality Grade Level | - | |
| Certification Qualification | - | |
| Attachment Mounting Style | Surface Mount | |
| Component Housing Style | 8-PowerVDFN | |
| Vendor Package Type | 8-DFN-EP (3.3x3.3) |
Description
Configured in a manner identified as 2 N-Channel (Dual) Common Drain. Is capable of sustaining a continuous drain current (Id) of 26A (Ta), 100A (Tc), 27A (Ta), 103A (Tc) at 25°C. Supports a Vdss drain-to-source voltage rated at 30V. Ensures maximum 40nC @ 10V gate charge at Vgs for improved switching efficiency. Maintains 40nC @ 10V gate charge at Vgs for dependable MOSFET operation. The maximum input capacitance reaches 1700pF @ 15V, 1650pF @ 15V at Vds to protect the device. The input capacitance is specified at 1700pF @ 15V, 1650pF @ 15V at Vds for peak performance. Mounting configuration Surface Mount for structural stability. Temperature range -55°C ~ 150°C (TJ) for environmental conditions impacting thermal efficiency. Type of housing Tape & Reel (TR) for safeguarding or transporting components. Style of the enclosure/case 8-PowerVDFN that offers mechanical and thermal protection. Type of package 8-DFN-EP (3.3x3.3) that preserves the integrity of the device. Maximum power capability 3.3W (Ta), 50W (Tc) for safeguarding the device. Product status Active concerning availability and lifecycle. Maximum Rds(on) at Id 40nC @ 10V for MOSFET performance. Maximum Rds(on) at Id and Vgs 3.2mOhm @ 20A, 10V, 3mOhm @ 20A, 10V for MOSFET specifications. Supplier package type 8-DFN-EP (3.3x3.3) for component selection. The primary technology platform MOSFET (Metal Oxide) linked to the product category. Maximum Vgs(th) at Id 2.1V @ 250µA for MOSFET threshold specifications.
