Stock:
Distributor: 117
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 25000 | ₹ 18.91000 | ₹ 4,72,750.00 |
| 15000 | ₹ 19.22000 | ₹ 2,88,300.00 |
| 10000 | ₹ 20.03000 | ₹ 2,00,300.00 |
| 5000 | ₹ 21.59000 | ₹ 1,07,950.00 |
Stock:
Distributor: 11
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 5000 | ₹ 27.68000 | ₹ 1,38,400.00 |
Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Import Duty Classification | - | |
| Product Series Line | - | |
| IC Encapsulation Type | Tape & Reel (TR) | |
| Availability Status | Active | |
| Core Technology Platform | MOSFET (Metal Oxide) | |
| Setup Arrangement | 2 N-Channel (Dual) Asymmetrical | |
| Transistor Special Function | - | |
| Drain-Source Breakdown Volts | 30V | |
| Continuous Drain Current at 25C | 13.8A (Ta), 18A (Tc) | |
| Max On-State Resistance | 8.5mOhm @ 20A, 10V | |
| Max Threshold Gate Voltage | 2.1V @ 250µA | |
| Max Gate Charge at Vgs | 20nC @ 10V | |
| Max Input Cap at Vds | 700pF @ 15V | |
| Maximum Power Handling | 2.5W (Ta), 23W (Tc) | |
| Ambient Temp Range | -55°C ~ 150°C (TJ) | |
| Quality Grade Level | - | |
| Certification Qualification | - | |
| Attachment Mounting Style | Surface Mount | |
| Component Housing Style | 8-WDFN Exposed Pad | |
| Vendor Package Type | 8-DFN-EP (3x3) |
Description
Configured in a manner identified as 2 N-Channel (Dual) Asymmetrical. Is capable of sustaining a continuous drain current (Id) of 13.8A (Ta), 18A (Tc) at 25°C. Supports a Vdss drain-to-source voltage rated at 30V. Ensures maximum 20nC @ 10V gate charge at Vgs for improved switching efficiency. Maintains 20nC @ 10V gate charge at Vgs for dependable MOSFET operation. The maximum input capacitance reaches 700pF @ 15V at Vds to protect the device. The input capacitance is specified at 700pF @ 15V at Vds for peak performance. Mounting configuration Surface Mount for structural stability. Temperature range -55°C ~ 150°C (TJ) for environmental conditions impacting thermal efficiency. Type of housing Tape & Reel (TR) for safeguarding or transporting components. Style of the enclosure/case 8-WDFN Exposed Pad that offers mechanical and thermal protection. Type of package 8-DFN-EP (3x3) that preserves the integrity of the device. Maximum power capability 2.5W (Ta), 23W (Tc) for safeguarding the device. Product status Active concerning availability and lifecycle. Maximum Rds(on) at Id 20nC @ 10V for MOSFET performance. Maximum Rds(on) at Id and Vgs 8.5mOhm @ 20A, 10V for MOSFET specifications. Supplier package type 8-DFN-EP (3x3) for component selection. The primary technology platform MOSFET (Metal Oxide) linked to the product category. Maximum Vgs(th) at Id 2.1V @ 250µA for MOSFET threshold specifications.
