Stock:
Distributor: 117
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 6000 | ₹ 54.73000 | ₹ 3,28,380.00 |
| 3000 | ₹ 56.63000 | ₹ 1,69,890.00 |
Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Import Duty Classification | - | |
| Product Series Line | - | |
| IC Encapsulation Type | Tape & Reel (TR) | |
| Availability Status | Active | |
| Core Technology Platform | MOSFET (Metal Oxide) | |
| Setup Arrangement | 2 N-Channel (Dual) Asymmetrical | |
| Transistor Special Function | - | |
| Drain-Source Breakdown Volts | 25V | |
| Continuous Drain Current at 25C | 17A (Ta), 60A (Ta), 34A (Ta), 60A (Tc) | |
| Max On-State Resistance | 4.6mOhm @ 17A, 10V, 1.4mOhm @ 20A, 10V | |
| Max Threshold Gate Voltage | 1.8V @ 250µA | |
| Max Gate Charge at Vgs | 21nC @ 10V, 80nC @ 10V | |
| Max Input Cap at Vds | 880pF @ 12.5V, 3215pF @ 12.5V | |
| Maximum Power Handling | 2W (Ta), 25W (Tc), 2.5W (Ta), 35.5W (Tc) | |
| Ambient Temp Range | -55°C ~ 150°C (TJ) | |
| Quality Grade Level | - | |
| Certification Qualification | - | |
| Attachment Mounting Style | Surface Mount | |
| Component Housing Style | 8-PowerWDFN | |
| Vendor Package Type | 8-DFN-EP (3.3x3.3) |
Description
Configured in a manner identified as 2 N-Channel (Dual) Asymmetrical. Is capable of sustaining a continuous drain current (Id) of 17A (Ta), 60A (Ta), 34A (Ta), 60A (Tc) at 25°C. Supports a Vdss drain-to-source voltage rated at 25V. Ensures maximum 21nC @ 10V, 80nC @ 10V gate charge at Vgs for improved switching efficiency. Maintains 21nC @ 10V, 80nC @ 10V gate charge at Vgs for dependable MOSFET operation. The maximum input capacitance reaches 880pF @ 12.5V, 3215pF @ 12.5V at Vds to protect the device. The input capacitance is specified at 880pF @ 12.5V, 3215pF @ 12.5V at Vds for peak performance. Mounting configuration Surface Mount for structural stability. Temperature range -55°C ~ 150°C (TJ) for environmental conditions impacting thermal efficiency. Type of housing Tape & Reel (TR) for safeguarding or transporting components. Style of the enclosure/case 8-PowerWDFN that offers mechanical and thermal protection. Type of package 8-DFN-EP (3.3x3.3) that preserves the integrity of the device. Maximum power capability 2W (Ta), 25W (Tc), 2.5W (Ta), 35.5W (Tc) for safeguarding the device. Product status Active concerning availability and lifecycle. Maximum Rds(on) at Id 21nC @ 10V, 80nC @ 10V for MOSFET performance. Maximum Rds(on) at Id and Vgs 4.6mOhm @ 17A, 10V, 1.4mOhm @ 20A, 10V for MOSFET specifications. Supplier package type 8-DFN-EP (3.3x3.3) for component selection. The primary technology platform MOSFET (Metal Oxide) linked to the product category. Maximum Vgs(th) at Id 1.8V @ 250µA for MOSFET threshold specifications.
