Description

Assesses resistance at forward current Tariff may apply if shipping to the United States for LED or diode testing. Configured in a manner identified as 2 N-Channel (Dual) Common Drain. Supports a Vdss drain-to-source voltage rated at 20V. Offers FET traits classified as Logic Level Gate. Ensures maximum 15.4nC @ 4.5V gate charge at Vgs for improved switching efficiency. Maintains 15.4nC @ 4.5V gate charge at Vgs for dependable MOSFET operation. The maximum input capacitance reaches 1390pF @ 10V at Vds to protect the device. The input capacitance is specified at 1390pF @ 10V at Vds for peak performance. Mounting configuration Surface Mount for structural stability. Temperature range -55°C ~ 150°C (TJ) for environmental conditions impacting thermal efficiency. Type of housing Tape & Reel (TR) for safeguarding or transporting components. Style of the enclosure/case 8-TSSOP (0.173", 4.40mm Width) that offers mechanical and thermal protection. Type of package 8-TSSOP that preserves the integrity of the device. Maximum power capability 1.5W for safeguarding the device. Product status Not For New Designs concerning availability and lifecycle. Maximum Rds(on) at Id 15.4nC @ 4.5V for MOSFET performance. Maximum Rds(on) at Id and Vgs 16mOhm @ 7.5A, 10V for MOSFET specifications. Supplier package type 8-TSSOP for component selection. The classification for import duties Tariff may apply if shipping to the United States related to import and export transactions. The primary technology platform MOSFET (Metal Oxide) linked to the product category. Maximum Vce(on) at Vge Tariff may apply if shipping to the United States for transistor specifications. Maximum Vgs(th) at Id 1V @ 250µA for MOSFET threshold specifications.