Attribute
Description
Manufacturer Part Number
ALD1117PAL
Description
MOSFET 2P-CH 10.6V 8PDIP
Manufacturer Lead Time
--
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Stock:

Distributor: 117

Quantity Unit Price Ext. Price
1000 ₹ 258.10000 ₹ 2,58,100.00
500 ₹ 259.43000 ₹ 1,29,715.00
100 ₹ 308.57000 ₹ 30,857.00
50 ₹ 336.63000 ₹ 16,831.50
1 ₹ 627.45000 ₹ 627.45

Product Attributes

Type Description
Category
Import Duty Classification -
Product Series Line -
IC Encapsulation Type Tube
Availability Status Active
Core Technology Platform MOSFET (Metal Oxide)
Setup Arrangement 2 P-Channel (Dual) Matched Pair
Transistor Special Function -
Drain-Source Breakdown Volts 10.6V
Continuous Drain Current at 25C -
Max On-State Resistance 1800Ohm @ 5V
Max Threshold Gate Voltage 1.2V @ 1µA
Max Gate Charge at Vgs -
Max Input Cap at Vds 3pF @ 5V
Maximum Power Handling 500mW
Ambient Temp Range 0°C ~ 70°C (TJ)
Quality Grade Level -
Certification Qualification -
Attachment Mounting Style Through Hole
Component Housing Style 8-DIP (0.300", 7.62mm)
Vendor Package Type 8-PDIP

Description

Configured in a manner identified as 2 P-Channel (Dual) Matched Pair. Supports a Vdss drain-to-source voltage rated at 10.6V. The maximum input capacitance reaches 3pF @ 5V at Vds to protect the device. The input capacitance is specified at 3pF @ 5V at Vds for peak performance. Mounting configuration Through Hole for structural stability. Temperature range 0°C ~ 70°C (TJ) for environmental conditions impacting thermal efficiency. Type of housing Tube for safeguarding or transporting components. Style of the enclosure/case 8-DIP (0.300", 7.62mm) that offers mechanical and thermal protection. Type of package 8-PDIP that preserves the integrity of the device. Maximum power capability 500mW for safeguarding the device. Product status Active concerning availability and lifecycle. Maximum Rds(on) at Id and Vgs 1800Ohm @ 5V for MOSFET specifications. Supplier package type 8-PDIP for component selection. The primary technology platform MOSFET (Metal Oxide) linked to the product category. Maximum Vgs(th) at Id 1.2V @ 1µA for MOSFET threshold specifications.