Stock:
Distributor: 117
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 50 | ₹ 369.83000 | ₹ 18,491.50 |
Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Import Duty Classification | - | |
| Product Series Line | EPAD® | |
| IC Encapsulation Type | Tube | |
| Availability Status | Active | |
| Core Technology Platform | MOSFET (Metal Oxide) | |
| Setup Arrangement | 2 N-Channel (Dual) Matched Pair | |
| Transistor Special Function | - | |
| Drain-Source Breakdown Volts | 10.6V | |
| Continuous Drain Current at 25C | 12mA, 3mA | |
| Max On-State Resistance | 500Ohm @ 4.4V | |
| Max Threshold Gate Voltage | 420mV @ 1µA | |
| Max Gate Charge at Vgs | - | |
| Max Input Cap at Vds | 2.5pF @ 5V | |
| Maximum Power Handling | 500mW | |
| Ambient Temp Range | 0°C ~ 70°C (TJ) | |
| Quality Grade Level | - | |
| Certification Qualification | - | |
| Attachment Mounting Style | Through Hole | |
| Component Housing Style | 8-DIP (0.300", 7.62mm) | |
| Vendor Package Type | 8-PDIP |
Description
Configured in a manner identified as 2 N-Channel (Dual) Matched Pair. Is capable of sustaining a continuous drain current (Id) of 12mA, 3mA at 25°C. Supports a Vdss drain-to-source voltage rated at 10.6V. The maximum input capacitance reaches 2.5pF @ 5V at Vds to protect the device. The input capacitance is specified at 2.5pF @ 5V at Vds for peak performance. Mounting configuration Through Hole for structural stability. Temperature range 0°C ~ 70°C (TJ) for environmental conditions impacting thermal efficiency. Type of housing Tube for safeguarding or transporting components. Style of the enclosure/case 8-DIP (0.300", 7.62mm) that offers mechanical and thermal protection. Type of package 8-PDIP that preserves the integrity of the device. Maximum power capability 500mW for safeguarding the device. Product status Active concerning availability and lifecycle. Maximum Rds(on) at Id and Vgs 500Ohm @ 4.4V for MOSFET specifications. Classification series for the product or component EPAD®. Supplier package type 8-PDIP for component selection. The primary technology platform MOSFET (Metal Oxide) linked to the product category. Maximum Vgs(th) at Id 420mV @ 1µA for MOSFET threshold specifications.
